Results 101 to 110 of about 4,054 (213)

Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver

e-Prime: Advances in Electrical Engineering, Electronics and Energy
The high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially ...
Salahaldein Ahmed, Pengyu Lai, Sudharsan Chinnaiyan, Alan Mantooth, Zhong Chen   +4 more
doaj   +1 more source

Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization

Advanced Science, Volume 13, Issue 13, 3 March 2026.
A single‐pulse approach uncovers trap dynamics in β‐Ga2O3 Schottky barrier diodes. Transient current profiling reveals rapid electron capture, delayed trap filling, and clear thermal effects. Extracted trap densities, capture time constants, and activation energies indicate that this simple pulse technique enables effective evaluation of trap states ...
Thanh Huong Vo, Sunjae Kim, Ji‐Hyeon Park, Dae‐Woo Jeon, Wan Sik Hwang, Jinyoung Hwang   +5 more
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

The Effect of Power MOSFET Materials on their Switching Performance

Journal of Scientific Research in Science
Power semiconductor devices have a great impact on the modern society electronic system applications. The study aims to improve the switching performance of power MOSFET devices based on materials with different bandgap structures and technologies.
Asmaa S. Ibrahim, Sanaa A. Kamh, F. A. S. Soliman, Doaa H. Hanafy   +3 more
doaj   +1 more source

The Rise of Organic Electrochemical Transistors for Brain‐Inspired Neuromorphic Computing

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
This review provides a comprehensive overview of organic electrochemical transistors (OECTs) for brain‐inspired computing. From fundamental device physics and material engineering to system‐level integration, it highlights OECTs' unique mixed ionic‐electronic conduction capabilities.
Heejin Kim, Hyunhak Jeong, Gunuk Wang
wiley   +1 more source

Arduino Nano Based SPWM (Sine Pulse Wide Modulation) Single Phase DC to AC Inverter

Protek: Jurnal Ilmiah Teknik Elektro
In off grid photovoltaic systems, the DC voltage from PV or batteries must be converted into a sinusoidal AC voltage that matches the AC voltage at home. The problem is that inverters available on the market are expensive.
budi pramono jati, Jenny Putri Hapsari
doaj   +1 more source

Spikoder: Dual‐Mode Graphene Neuron Circuit for Hardware Intelligence

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Spikoder, a graphene leaky integrate‐and‐fire circuit that operates as an encoder and a neuron in a spiking neural network (SNN), is introduced. A Spikoder‐driven double‐layer SNN shows an accuracy of 97.37% for the classification of the Modified National Institute of Standards and Technology dataset, demonstrating its potential as a key building block
Kannan Udaya Mohanan, Seyed Mehdi Sattari‐Esfahlan, Eou‐Sik Cho, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Impact of gamma-ray irradiation on commercial silicon carbide MOSFET with boost converter application

Power Electronic Devices and Components
This paper study impact of gamma-ray irradiation on the characteristics of silicon carbide power metal oxide semiconductor field effect transistor (SiC MOSFET) from CREE, Inc., and its corresponding effects on the operation of 5/12 V DC-DC boost ...
S. M. Abd El-Azeem, W. Abd El-Basit
doaj   +1 more source

Hybrid Convolutional Neural Network‐Analytical Model for Prediction of Line Edge Roughness‐Induced Performance Variations in Fin‐Shaped Field‐Effect Transistor Devices and SRAM

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
This work presents a hybrid model for predicting the electrical characteristics of fin‐shaped field‐effect transistor devices and SRAM with line edge roughness. The model consists of a convolutional neural network (CNN) and an analytical model that simulates the electrical characteristics of transistors using the outputs of CNN, enabling fast and ...
Jaehyuk Lim, Myongjin Kim, Changwoo Han, Hyoung Won Baac, Changhwan Shin   +4 more
wiley   +1 more source