Results 131 to 140 of about 6,179,454 (334)
Enhancing Q‐Learning via State‐Space Design for Active Battery Balancing
Battery Energy, Volume 5, Issue 2, March 2026.This study investigates the profound impact of state definition on the efficacy of Q‐learning for active battery balancing in lithium‐ion battery packs. We define and evaluate three distinct state representations—[State 1, 11‐state space definition], [State 2, 27‐state space definition], and [State 3, 81‐state space definition]—within a reinforcement ...
Fatemeh Ebrahimabadi +2 more
wiley +1 more source
Research on High Efficient Resonant Full-bridge Converter with High Voltage SiC MOSFET
Kongzhi Yu Xinxi Jishu, 2016 With SiC MOSFET, resonant converter can achieve high frequency and high efficiency, thus increasing the power density with reducing total cost and simplify topology.
Jimmy Liu, John Mookken, Kin Lap
doaj
IEEE AccessSilicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been widely applied in electronic equipment, owing to the rapidly switching speed and superior thermal performance.
Zhibo Zhu, Yang Zhao, Wei Yan
doaj +1 more source
A Self-Powered DSSH Circuit with MOSFET Threshold Voltage Management for Piezoelectric Energy Harvesting [PDF]
, 2023 Liao Wu, Wang Xin-hui, Minghua Xie
openalex +1 more source
Advanced Materials, Volume 38, Issue 7, 2 February 2026.Super‐steep subthreshold swing (SS) below 60 mV dec−1 is demonstrated in graphene/IGZO cold source transistor arrays. Linear density of states with Dirac cone in graphene suppressed the Boltzmann thermal tail, while high‐k HfO2 dielectric having small body factor enhanced gating efficiency, hereby further reducing SS. An average SS of ≈46.4 mV dec−1 is
Seyoung Oh +13 more
wiley +1 more source
e-Prime: Advances in Electrical Engineering, Electronics and EnergyThe high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially ...
Salahaldein Ahmed +4 more
doaj +1 more source
Low-Power Resistive Memory Integrated on III–V Vertical Nanowire MOSFETs on Silicon
, 2020 Mamidala Saketh Ram +3 more
openalex +2 more sources
Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era
Advanced Materials, Volume 38, Issue 7, 2 February 2026.In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu +3 more
wiley +1 more source
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee +7 more
wiley +1 more source
The Effect of Power MOSFET Materials on their Switching Performance
Journal of Scientific Research in SciencePower semiconductor devices have a great impact on the modern society electronic system applications. The study aims to improve the switching performance of power MOSFET devices based on materials with different bandgap structures and technologies.
Asmaa S. Ibrahim +3 more
doaj +1 more source