Results 151 to 160 of about 4,054 (213)

Power MOSFET technology

1979 International Electron Devices Meeting, 1979
The recent development of high performance power MOSFET's threatens the Bipolar transistor monopoly on power control. Analysis of the presently available devices reveals several areas of superior performance. Properly designed power MOSFET's exhibit ultra-high speed operation, freedom from second breakdown, excellent temperature stability and large ...
A. Lidow, T. Herman, H.W. Collins
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Power Mosfet And Power Diode Models

[Proceedings] 1990 IEEE Workshop on Computers in Power Electronics, 2005
Equations derived from simplified device physics are used to implement power device models for circuit simulators. Expressions for the MOSFET capacitances Cgd(v) and Cgs(v) are based on the deltadepletion model for the gate-drain interface. For the diode, the basic charge-control model used in SPICE is extended to include reverse recovery.
C.L. Ma, P.O. Lauritzen, null Jigang Ong
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Self-Thermal Protecting Power MOSFETs

SAE Technical Paper Series, 1987
<div class="htmlview paragraph">A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs.</div>
Y. Tsuzuki, M. Yamaoka, K. Kawamoto
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Power MOSFET Verilog modelling

2016 12th IEEE International Symposium on Electronics and Telecommunications (ISETC), 2016
Power MOSFETs are electronic devices used for modern switches. The complexity of mixed-signal system-on-chip using power MOSFETs has increased. Advanced analog and digital interfaces, tough requirements for their safety and reliability impose new advanced methodologies for their simulations.
Lidia Dobrescu, Daniel Tudora, Dragos Dobrescu   +2 more
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Easy Mosfet Power

Electric and Hybrid Vehicle Technology International, 2018
High power levels and possibilities for integration make the latest generation of inverters suitable for vehicle electrification and industrial applications
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Power MOSFET failure mechanisms

2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915), 2005
Power MOSFET failure mechanisms are reviewed and discussed with emphasis on the parasitic bipolar transistor (BJT) turn on. The first two failure mechanisms reviewed result from high dV/sub DS//dt. The third failure mechanism results from the slow reverse recovery of the MOSFET body diode and the fourth is a single event breakdown due to inadequate ...
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Energy efficient power MOSFETs

2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010
An overview is given of the main technology trends and innovations in Power MOSFET transistors ranging from LV(
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Power MOSFET failure revisited

PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference, 2003
The failure of power MOSFETs during avalanche breakdown is discussed. A theory is presented that relates the failure to the temperature rise of the chip during the avalanche breakdown and to a critical current for failure. It is shown that the energy that can be safely dissipated during avalanche breakdown decreases as the starting current increases or
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