Results 31 to 40 of about 6,179,454 (334)

Prognostics of power MOSFET [PDF]

open access: yes2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011
This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs.
Jose R. Celaya   +4 more
openaire   +1 more source

Recent research progress of single particle effect of SiC MOSFET

open access: yesHe jishu, 2022
With the rapid development of nuclear energy and space technology, application of high-voltage power devices based on SiC, especially the SiC MOSFET, is increasing. The problems of single event effect (SEE) caused by high-energy particle radiation in the
LIU Cuicui   +6 more
doaj   +1 more source

Less-conventional low-consumption galvanic separated MOSFET-IGBT gate drive supply [PDF]

open access: yes, 2017
A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it
Bikorimana, Jean Marie Vianney   +1 more
core   +3 more sources

COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs

open access: yesPlatform, a Journal of Engineering, 2021
The performance of power MOSFET is affected by high thermal stress exposure. A high level of thermal stress is induced when the MOSFET experiences a temperature change. This finding is about the bonding wire lift-off on the solder pad.
Shree Chakravarthy Devadas   +1 more
doaj  

Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations [PDF]

open access: yes, 2019
The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide ...
Antoniou, M   +6 more
core   +1 more source

Two-stage optimization method for efficient power converter design including light load operation [PDF]

open access: yes, 2012
Power converter efficiency is always a hot topic for switch mode power supplies. Nowadays, high efficiency is required over a wide load range, e.g., 20%, 50% and 100% load.
Lam, James   +3 more
core   +1 more source

Analytical Switching Model of a 1200V SiC MOSFET in a High-Frequency Series Resonant Pulsed Power Converter for Plasma Generation

open access: yesIEEE Access, 2019
The circuit parasitic components have a significant effect on switching performance in the high-voltage and high-frequency pulsed power converter.
Qunfang Wu   +5 more
doaj   +1 more source

Microwave Irradiation Effects on Random Telegraph Signal in a MOSFET

open access: yes, 2006
We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised.
Alessandro Calderoni   +16 more
core   +1 more source

Assessment of ecosystem integrity of lowland dipterocarp forest ecosystem using remote sensing [PDF]

open access: yes, 2021
Ecosystem Integrity Index (EII) is a concept to determine the quality or the health of an ecosystem. The EII development can assist forest managers and decision makers in the conservation effort and forest management in Malaysia through the development ...
Abdul Razak, Muhammad Azmil
core  

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

open access: yesIEEE Journal of the Electron Devices Society, 2021
A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation.
Ya Liang Zheng   +4 more
doaj   +1 more source

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