Results 61 to 70 of about 6,179,454 (334)

Atomic‐Scale Mechanisms of Multi‐Resistance States in HfOx‐Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies

Advanced Science, EarlyView.
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun, Yuyan Wang, Ruofei Hu, Yuyao Lu, Jun Xu, Xinyi Li, Bin Gao, He Qian, Jianshi Tang, Huaqiang Wu   +9 more
wiley   +1 more source

Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing

Advanced Science, EarlyView.
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang, Chengqian Cui, Xiaoli Jing, Rui You, Mingjun Zhang, Jing Xu   +5 more
wiley   +1 more source

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

IEEE Access, 2023
This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications.
Nilesh Kumar Jaiswal, V. N. Ramakrishnan
doaj   +1 more source

Voltage to frequency converter Patent [PDF]

, 1971
Voltage controlled, variable frequency relaxation oscillator with MOSFET variable current ...
Lokerson, D. C.
core   +1 more source

Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing

, 2009
We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances.
Agarwal S. C., Amasha S., Ashoori R. C., Cohen J. D., Drndić M., Drndić M., Elzerman J. M., Field M., Fritzsche H., Fujisawa T., Gustavsson S., Kastner M. A., Mentzel T. S., Orenstein J., Petta J. R., Ralls K. S., Robertson J., Schaller R. D., Senturia S. D., Street R. A., Tiedje T.   +20 more
core   +1 more source

Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization

Advanced Science, EarlyView.
A single‐pulse approach uncovers trap dynamics in β‐Ga2O3 Schottky barrier diodes. Transient current profiling reveals rapid electron capture, delayed trap filling, and clear thermal effects. Extracted trap densities, capture time constants, and activation energies indicate that this simple pulse technique enables effective evaluation of trap states ...
Thanh Huong Vo, Sunjae Kim, Ji‐Hyeon Park, Dae‐Woo Jeon, Wan Sik Hwang, Jinyoung Hwang   +5 more
wiley   +1 more source

Research on High-power Full SiC Converter

机车电传动, 2018
In order to adapt to the development trend of high frequency and high power density of converter products, the application of high-power all-SiC-MOSFET device in converter was studied.
ZHANG Qing, ZHANG Xiaoyong, RAO Peinan, SHI Hongliang, ZHAO Mingrui, ZHOU Shuai   +5 more
doaj  

A Novel 4H‐SiC MOSFET With High‐K/Low‐K Dielectric for Improved Frequency Characteristics

IET Power Electronics
Split‐Gate MOSFET (SG‐MOSFET) is promising in power‐switching circuits due to the fast turn‐on/off speed and low switching loss. However, in higher‐frequency applications, the gate architecture needs to be changed to obtain the improved high‐frequency ...
Jiaxing Chen, Juntao Li, Lin Zhang
doaj   +1 more source

Monte Carlo simulations of high-performance implant free In_0.3Ga_0.7 nano-MOSFETs for low-power CMOS applications [PDF]

, 2007
No abstract ...
Asenov, A., Droopad, R., Hill, R.J.W., Kalna, K., Long, A.R., Moran, D.A.J., Passlack, M., Thayne, I.G., Wilson, J.A.   +8 more
core   +1 more source

Smart Energy–Harvesting Coating for Moisture–Droplets Based on Ionic Diodes and Transistor–Like Structures

Advanced Science, EarlyView.
A smart power‐generating coating is developed to harvest energy from both ambient humidity and impacting liquid droplets. The integrated system delivers sustained open‐circuit voltages of 0.85 V from moisture and up to 36 V from droplets. Its scalable coating architecture enables a continuous power supply for low‐power electronic devices.
Liang Ma, Mengdi Liu, Yuxi Yang, Zehao Wang, Lan Shi, Limin Wu   +5 more
wiley   +1 more source