Results 81 to 90 of about 4,054 (213)
Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles. [PDF]
Cheng HC, Lin SY, Liu YC.
europepmc +1 more source
Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications
Hafnium‐based ferroelectric devices exhibit advantages in nonvolatile storage, low power consumption, and ultrahigh operation speed, positioning them as strong candidates for constructing hardware neural networks. ABSTRACT The discovery of ferroelectricity in HfO2‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric ...
Chenghong Mo +3 more
wiley +1 more source
Organic neuromorphic electronics powering intelligent sensory and edge computing systems
Organic electronic materials are promising candidates for neuromorphic sensing applications, including chemical, physical, visual, and multimodal sensing, owing to their mechanical softness, biocompatibility, and intrinsic ionic–electronic coupling.
Seungjun Woo +5 more
wiley +1 more source
The bidirectional switch (Bi-Sw) is a power device widely used by power conversion systems. This paper presents a novel modular design of a Bi-Sw with the purpose of providing to beginner researchers the key issues to design a power converter.
Edgar Maqueda +6 more
doaj +1 more source
High performance RF power MOSFET
A novel high voltage silicon RF LDMOSFET in SOI technology based on the 3D-RESURF concept is proposed. For the same blocking voltage rating, the new structure allows the LDMOSFET to have higher current handling capability at high gate voltages. This in turn causes the transconductance to be higher, leading to overall better RF performance.
G.P.V. Pathirana, F. Udrea
openaire +1 more source
Coaxial Dipole Array With Switching Transmit Sensitivities for Ultrahigh Field MRI
ABSTRACT Purpose To investigate dipole antennas with electronically switchable transmit field patterns to improve flip angle homogeneity in ultra‐high field MRI. Methods Reconfigurable dipole elements that could produce two distinct electronically switchable B1+$$ {B}_1^{+} $$ field profiles were conceptualized and constructed. Eight such elements were
Dario Bosch +5 more
wiley +1 more source
Advances in Gate Dielectrics for 2D Electronics
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung +2 more
wiley +1 more source
ABSTRACT In the present study, we have analyzed the growth profile of ruthenium (Ru) thin films, deposited using pulsed direct current (DC) magnetron sputtering technique, by varying the sputtering voltages in the range of 150–420 V. The grazing incidence X‐ray reflectivity (GIXRR), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and atomic ...
Shruti Gupta +6 more
wiley +1 more source
Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn +8 more
wiley +1 more source
Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are essential in modern electronics, enabling efficient power conversion and control in a wide range of applications. Wide bandgap semiconductors such as silicon carbide (SiC) and gallium
Marco Boccarossa +6 more
doaj +1 more source

