Results 81 to 90 of about 6,179,454 (334)

Device-Circuit Level Simulation Study of Three Inputs Complex Logic Gate Designed Using Nano-MOSFETs

open access: yesApplications of Modelling and Simulation, 2019
Simulation study on silicon-based nano-MOSFETs logic circuits is needed to add more knowledge on the nanoscale circuit performance. Therefore, in this paper, simulation study is carried out on three inputs complex logic gate transistor circuits with four
Ooi Chek Yee
doaj  

MOSFET parallel-connection of low-voltage MMC for LVDC distribution networks [PDF]

open access: yes, 2016
A highly efficient DC-AC converter is key to the success of low-voltage DC (LVDC) distribution networks. Calculated power losses in a conventional IGBT 2-level converter, a SiC MOSFET 2-level converter, a Si MOSFET modular multilevel converter (MMC) and ...
Finney, Stephen   +3 more
core  

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

open access: yes, 2011
This paper presents an extended model for the CMOS-based ion-sensitive field-effect transistor, incorporating design parameters associated with the physical geometry of the device. This can, for the first time, provide a good match between calculated and
Constandinou, TG   +4 more
core   +1 more source

Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise [PDF]

open access: yes, 2003
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions).
Klumperink, Eric A.M.   +3 more
core   +3 more sources

MOSFETS Power Consumption and Power Dissipation Calculation

open access: yesJournal of Physics: Conference Series, 2021
Abstract Metal oxide semiconductor field effect transistors are usually called MOSFET. Nowadays, MOSFET is one of the most crucial electrical components that engineers usually use when constructing laptops and desktop computers. A large number of MOSFETS are usually integrated together to form control and logic functions of computers CPU.
openaire   +1 more source

Self‐Driving Laboratory Optimizes the Lower Critical Solution Temperature of Thermoresponsive Polymers

open access: yesAdvanced Intelligent Discovery, EarlyView.
A low‐cost, self‐driving laboratory is developed to democratize autonomous materials discovery. Using this "frugal twin" hardware architecture with Bayesian optimization, the platform rapidly converges to target lower critical solution temperature (LCST) values while self‐correcting from off‐target experiments, demonstrating an accessible route to data‐
Guoyue Xu, Renzheng Zhang, Tengfei Luo
wiley   +1 more source

Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and delta-doped channels [PDF]

open access: yes, 1999
A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub 0.1-μm MOSFET architectures with epitaxial channels and delta doping is presented.
Asenov, A., Saini, S.
core   +1 more source

Temperature‐Tunable Cholesteric Liquid Crystal Optical Combiners for Extended Reality Applications

open access: yesAdvanced Intelligent Systems, Volume 7, Issue 3, March 2025.
Recent advancements in extended reality highlight their potential to enhance traditional displays like liquid crystal displays and organic light‐emitting diode screens. This article introduces an innovative cholesteric liquid crystal‐based optical combiner for head‐mounted displays, enabling seamless transitions between augmented reality, virtual ...
Yuanjie Xia   +6 more
wiley   +1 more source

Spikoder: Dual‐Mode Graphene Neuron Circuit for Hardware Intelligence

open access: yesAdvanced Intelligent Systems, EarlyView.
Spikoder, a graphene leaky integrate‐and‐fire circuit that operates as an encoder and a neuron in a spiking neural network (SNN), is introduced. A Spikoder‐driven double‐layer SNN shows an accuracy of 97.37% for the classification of the Modified National Institute of Standards and Technology dataset, demonstrating its potential as a key building block
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field

open access: yesIEEE transactions on power electronics, 2020
The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium- and high-voltage systems. However, present power module packages are limiting the performance of these unique switches.
C. Dimarino   +4 more
semanticscholar   +1 more source

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