Results 11 to 20 of about 20,066 (272)

Comprehensive Study of Security and Privacy of Emerging Non-Volatile Memories

Journal of Low Power Electronics and Applications, 2021
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a ...
Mohammad Nasim Imtiaz Khan, Swaroop Ghosh   +1 more
doaj   +1 more source

A novel read circuit for RRAM based on RC delay effect

Electronics Letters, 2023
In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit.
Jiabao Ye, Xuecheng Cui, Haoxiong Bi, Jifang Cao, Wannian Wang, Xiaoxin Xu, Dong Liu, Bing Chen   +7 more
doaj   +1 more source

Effective Current-Driven Memory Operations for Low-Power ReRAM Applications

IEEE Access, 2023
Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innovative
Albert Cirera, Blas Garrido, Antonio Rubio, Ioannis Vourkas   +3 more
doaj   +1 more source

RRAM variability and its mitigation schemes [PDF]

, 2016
Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories.
Amat, Esteve, Hamdioui, Said, Pouman, Peyman, Rubio Sola, Jose Antonio   +3 more
core   +1 more source

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

IEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan, Nicholas Olexa, Brett Hochman, Swarup Bhunia, Rashmi Jha, Soumyajit Mandal   +5 more
doaj   +1 more source

Resistive and Spintronic RAMs: Device, Simulation, and Applications [PDF]

2018 IEEE 24th International Symposium on On-Line Testing And Robust System Design (IOLTS), 2018
The emergence of non-volatile random access memory technologies, such as resistive and spintronic RAMs are triggering intense interdisciplinary activity. These technologies have the potential of providing many benefits, such as energy efficiency, high integration density, CMOS-compatibility, re-configurability, non-volatility and open the path towards ...
Vatajelu, Elena Ioana, Anghel, Lorena, Portal, Jean-Michel, Bocquet, Marc, Prenat, Guillaume   +4 more
openaire   +2 more sources

Reconfigurable writing architecture for reliable RRAM operation in wide temperature ranges [PDF]

, 2016
Resistive switching memories [resistive RAM (RRAM)] are an attractive alternative to nonvolatile storage and nonconventional computing systems, but their behavior strongly depends on the cell features, driver circuit, and working conditions.
Aparicio Cerqueira, Hernán, García Redondo, Fernando, Ituero Herrero, Pablo, López Barrio, Carlos Alberto, López Vallejo, Marisa, Royer del Barrio, Pablo   +5 more
core   +2 more sources

Impact of laser attacks on the switching behavior of RRAM devices [PDF]

, 2020
The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory ...
Arumi Delgado, Daniel, Bargalló González, Mireia, Campabadal, Francesca, Gómez Pau, Álvaro, Hernández, David, Manich Bou, Salvador, Montilla, Víctor, Rodríguez Montañés, Rosa   +7 more
core   +2 more sources

First evidence of resistive switching in polycrystalline GaV4S8 thin layers [PDF]

, 2011
Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se).
Beck, Besland, Besland, Cario, Chapert, Dubost, Elissalde, Goux, Huai, Huai, Kim, Liu, Mangin, Modera, Nishimura, Stadelmann, Szot, Vaju, Vaju, Waser   +19 more
core   +3 more sources

Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure

AIP Advances, 2019
Superior thermal stability of resistive switching performance is essential for resistive random access memory (R-RAM) device with high reliability.
H. Y. Zhang, W. M. Xiong, X. Y. Zhang, Biao Wang, Yue Zheng   +4 more
doaj   +1 more source