Results 251 to 260 of about 20,099 (291)
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Multistate Register Based on Resistive RAM
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2015In recent years, memristive technologies, such as resistive random access memory (RRAM), have emerged. These technologies are usually considered as alternates for static RAM, dynamic RAM, and Flash. In this paper, a novel digital circuit, the multistate register, is proposed.
Ravi Patel +3 more
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Resistive RAMs as analog trimming elements
Solid-State Electronics, 2018Abstract This work investigates the use of Resistive Random Access Memory (RRAM) as an analog trimming device. The analog storage feature of the RRAM cell is evaluated and the ability of the RRAM to hold several resistance states is exploited to propose analog trim elements. To modulate the memory cell resistance, a series of short programming pulses
H. Aziza, A. Perez, J.M. Portal
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Resistance is not futile [resistive RAM]
Engineering & Technology, 2008The article presents a type of RAM that researchers believed could replace DRAM and flash memory. The operating principle of this resistive RAM is also presented in this paper.
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2018
Resistive random-access memory (ReRAM) is a promising non-volatile memory with the configurability of resistance programmed by pulse voltage or current. ReRAM can be used for memory and computation. In this chapter, we will start with these applications and design components for ReRAM.
Qing Yang, Bonan Yan, Hai Li
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Resistive random-access memory (ReRAM) is a promising non-volatile memory with the configurability of resistance programmed by pulse voltage or current. ReRAM can be used for memory and computation. In this chapter, we will start with these applications and design components for ReRAM.
Qing Yang, Bonan Yan, Hai Li
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A strong arbiter PUF using resistive RAM
2016 International Conference on Embedded Computer Systems: Architectures, Modeling and Simulation (SAMOS), 2016Physically Unclonable Functions (PUF) are the cost effective and reliable security primitives widely used in authentication and in-place secret key generation applications. With growing research in the area of non-CMOS technologies for memories and circuits, it's important to understand their implications on the design of security primitives. Resistive
Swaroop Ghosh, Rekha Govindaraj
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Research on Memristor Oriented to Resistive RAM
Applied Mechanics and Materials, 2013With the process of high integration, low power consumption, small size in the semiconductor industry, resistive RAM has drawn increasing attention. The discovery of the memristor brings much more to this study. These researches focus on resistive switching characteristics of different materials and analysis of resistive switching mechanisms.
Da Huang, Yu Hua Tang
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Resistive-Memory Embedded Unified RAM (R-URAM)
IEEE Transactions on Electron Devices, 2009A disturb-free unified RAM (URAM) is demonstrated. It consists of a nonvolatile memory (NVM) and a capacitorless dynamic random access memory (DRAM) in a single-cell transistor. The NVM function is achieved by the resistive switching of an Al2O3 film, and the capacitorless DRAM operation is attained by hole accumulation in a floating body.
Kim, S Kim, Sungho +2 more
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SEU-hardened resistive-load static RAMs
IEEE Transactions on Nuclear Science, 1991A charge partitioning (CP) design technique for MOS resistive-load static RAMs (RMOS SRAMs) is presented. This technique, when applied to RMOS SRAMs with specific capacitance attributes, may produce significant SEU error-rate control without sacrifices in area or power consumption.
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Resistive Switching Characteristics of Zinc Oxide Resistive RAM Doped with Nickel
ECS Transactions, 2013Resistive switching characteristics of zinc oxide thin films with nickel doped were investigated in this paper. A device cell with the structure of TiN/ZnO/Ni/ZnO/Pt/substrate was fabricated by radio frequency magnetron sputtering. The cells showed stable bipolar with an on/off ratio of ~104 at a set voltage of 2V.
Sun Wenxiang +5 more
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Variable resistance polysilicon for high density CMOS RAM
1979 International Electron Devices Meeting, 1979A new and attractive structure of static RAM cell with a variable resistance polysilicon load, i.e. a polysilicon transistor load (PTL) has been developed. The resistance is controlled by "under gate" formed of underlying n+-layer. Symmetric p- and n-MOSFET actions of the undoped polysilicon transistor are observed and theoretically analyzed.
T. Iizuka +4 more
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