Results 261 to 270 of about 20,099 (291)

PUF designed with Resistive RAM and Ternary States

Proceedings of the 11th Annual Cyber and Information Security Research Conference, 2016
The designs of Physically Unclonable Functions (PUFs) described in this paper are based on Resistive RAMs incorporating ternary states with the objective to reduce false negative authentications (FNA) with low Challenge-Response-Pair (CRP) error rates.
Bertrand Cambou, Marius Orlowski
openaire   +1 more source

High Speed Unipolar Switching Resistance RAM (RRAM) Technology

2006 International Electron Devices Meeting, 2006
We have successfully achieved high speed (~50 ns) unipolar operation in RRAM devices comprised of titanium oxynitride (TiON) combined with a control resistor connected in series. For unipolar switching, programming and erasing pulses can be the same width, typically, a few tens of nano-seconds.
Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, I. H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Akoh, Y. Tokura   +15 more
openaire   +1 more source

Fast-Write Resistive RAM (RRAM) for Embedded Applications

IEEE Design & Test of Computers, 2011
Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.
null Shyh-Shyuan Sheu, null Kuo-Hsing Cheng, null Meng-Fan Chang, null Pei-Chia Chiang, null Wen-Pin Lin, null Heng-Yuan Lee, null Pang-Shiu Chen, null Yu-Sheng Chen, null Tai-Yuan Wu, Frederick T Chen, null Keng-Li Su, null Ming-Jer Kao, null Ming-Jinn Tsai   +12 more
openaire   +1 more source

Nano-Ionic Solid State Resistive Memories (Re-RAM): A Review

Journal of Nanoscience and Nanotechnology, 2017
Nano-ionic devices based on modest to fast ion conductors as active materials intrigued a revolution in the field of nano solid state resistive memories (the so-called Re-RAM) ever since HP labs unveiled the first solid state memristor device based on titanium dioxide (TiO2).
Satyajeet, Sahoo, S R S, Prabaharan
openaire   +2 more sources

Molecular dynamics simulation of amorphous HfO₂for resistive RAM applications

Modelling and Simulation in Materials Science and Engineering, 2014
HfO2 is widely investigated as the favoured material for resistive RAM device implementation. The structural features of HfO2 play a fundamental role in the switching mechanisms governing resistive RAM operations, and a comprehensive understanding of the relation between the atomistic properties and final device behaviour is still missing. In addition,
BROGLIA, GIULIA, G. Ori, LARCHER, Luca, MONTORSI, Monia   +3 more
openaire   +3 more sources

Quantitative retention model for filamentary oxide-based resistive RAM

Microelectronic Engineering, 2017
Filamentary resistive RAM devices have been developed as a possible alternative memory device. In previous work, the device operation has been described using the hourglass model. In the present paper, a simple but quantitative retention model for OxRRAM devices is developed in the framework of the hourglass model.
R. Degraeve, C.Y. Chen, U. Celano, A. Fantini, L. Goux, D. Linten, G.S. Kar   +6 more
openaire   +1 more source

An improved BCH code for crossbar-based resistive RAM

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016
Recently, the Error Correction Code (ECC) circuit has been applied to Resistive RAM (RRAM) that suffers from the process variations to improve the reliability and write power consumption. Furthermore, more high resistance state (HRS) cells in the array are beneficial for the crossbar-based RRAM to reduce the sneak current and operation power ...
null Jiantong Jiang, null Xiaole Cui, null Xiaoyan Xu, null Chunliang Liu, null Shengming Zhou   +4 more
openaire   +1 more source

Joint Resistance to Ram

2005 U.S. Air Force T&E Days, 2005
Gregory Czarnecki, Ronald Hinrichsen, Michele Maxson   +2 more
openaire   +1 more source

Collusion-Resistant Functional Encryption for RAMs

2022
Prabhanjan Ananth, Kai-Min Chung, Xiong Fan, Luowen Qian   +3 more
openaire   +1 more source

Integrative oncology: Addressing the global challenges of cancer prevention and treatment

Ca-A Cancer Journal for Clinicians, 2022
Jun J Mao,, Msce, Lorenzo Cohen, Karen M Mustian   +2 more
exaly