Results 21 to 30 of about 20,066 (272)
Ferroelectric tunnel junctions: current status and future prospect as a universal memory
Frontiers in Materials, 2023 The semiconductor industry is actively looking for an all-encompassing memory solution that incorporates the advantageous aspects of current technology. This features non-volatility, like that of Flash memory, high scalability, like that of both Dynamic ...
Urvashi Sharma +6 more
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Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Di Carlo, Stefano +3 more
core +1 more source
DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability
Journal of Low Power Electronics and Applications, 2017 To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Sparsh Mittal +2 more
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Animals, 2022 The study aimed to conduct advanced semen evaluation tests during routine ram examination periods in the breeding and non-breeding seasons and to investigate their correlation with the dynamics of testicular blood flow.
Natalia Kozłowska +5 more
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Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]
, 2014 An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng +6 more
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Nano Resistive Memory (Re-RAM) Devices and their Applications
Reviews on Advanced Materials Science, 2019 Use of solid state ionic conductors the so-called Solid Electrolytes has brought new impetus to the field of solid state memories namely resistive random access memory (Re-RAM).
Dash Chandra Sekhar, Prabaharan S. R. S.
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IEEE Journal of the Electron Devices Society, 2018 We report on material improvements to non-filamentary RRAM devices based on Pr0.7Ca0.3MnO3 by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as ...
Kibong Moon +7 more
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Ultralow switching voltage and power consumption of GeS2 thin film resistive switching memory
Journal of Advanced Dielectrics, 2021 The coming Big Data Era requires progress in storage and computing technologies. As an emerging memory technology, Resistive RAM (RRAM) has shown its potential in the next generation high-density storage and neuromorphic computing applications, which ...
N. Lyapunov +9 more
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Limits of Breach-Resistant and Snapshot-Oblivious RAMs
, 2023 Oblivious RAMs (ORAMs) are an important cryptographic primitive that enable outsourcing data to a potentially untrusted server while hiding patterns of access to the data. ORAMs provide strong guarantees even in the face of a persistent adversary that views the transcripts of all operations and resulting memory contents.
Persiano, Giuseppe, Yeo, Kevin
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Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk
Advanced Electronic Materials, 2023 A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause their ...
Mohammad Al‐Mamun +2 more
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