Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications [PDF]
Nanoscale Research Letters, 2020 In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor +2 more
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Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays [PDF]
NanomaterialsResistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications.
Mikhail Fedotov +2 more
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Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices [PDF]
Журнал нано- та електронної фізики, 2016 In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
T.D. Dongale +12 more
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Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO3 Layers [PDF]
NanomaterialsTwo-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures.
Kai Liu +9 more
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Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing. [PDF]
Chem RevIn the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory devices must evolve significantly to provide the necessary bit capacity, performance, and energy efficiency needed in computation.
Ielmini D, Pedretti G.
europepmc +3 more sources
A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities. [PDF]
Sci RepA highly efficient approach for synthesizing a supramolecular metallogel of Co(II) ions, denoted as CoA-TA, has been established under room temperature and atmospheric pressure conditions. This method employs the metal-coordinating organic ligand benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent.
Roy A +9 more
europepmc +4 more sources
Quantum Dots for Resistive Switching Memory and Artificial Synapse [PDF]
NanomaterialsMemristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim +2 more
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Modeling-Based Design of Memristive Devices for Brain-Inspired Computing
Frontiers in Nanotechnology, 2021 Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao +4 more
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Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature
Advanced Electronic Materials, 2023 The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture.
Jun Lan +15 more
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Materials & Design, 2022 Resistive random-access memory (RRAM) is a new memory technology that can not only realize high-density storage, but also can simulate the neural synapse for use in artificial intelligence applications. In this study, we propose an RRAM device that shows
Zhiliang Chen +9 more
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