Results 91 to 100 of about 11,242 (219)

Glucose-based resistive random access memory for transient electronics

Journal of Information Display, 2019
In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park, Hee Jun Kim, Jin Hyeok Lee, Hyun Jae Kim   +3 more
doaj   +1 more source

Triboelectric Tactile Transducers for Neuromorphic Sensing and Synaptic Emulation: Materials, Architectures, and Interfaces

Advanced Energy and Sustainability Research, EarlyView.
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar, Arunkumar Chandrasekhar, Poongundran Selvaprabhu   +2 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

Advanced Intelligent Systems, EarlyView.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze, Bhavani Yalagala, Naveen Kumar, Mostafa Elsayed, Meraj Ahmad, Robert Graham, Vihar Georgiev, Hadi Heidari, Martin Weides   +8 more
wiley   +1 more source

Monolithic three-dimensional integration of RRAM-based hybrid memory architecture for one-shot learning

Nature Communications, 2023
In this work, we report the monolithic three-dimensional integration (M3D) of hybrid memory architecture based on resistive random-access memory (RRAM), named M3D-LIME.
Yijun Li, Jianshi Tang, Bin Gao, Jian Yao, Anjunyi Fan, Bonan Yan, Yuchao Yang, Yue Xi, Yuankun Li, Jiaming Li, Wen Sun, Yiwei Du, Zhengwu Liu, Qingtian Zhang, Song Qiu, Qingwen Li, He Qian, Huaqiang Wu   +17 more
doaj   +1 more source

Dendritic-Inspired Processing Enables Bio-Plausible STDP in Compound Binary Synapses

, 2018
Brain-inspired learning mechanisms, e.g. spike timing dependent plasticity (STDP), enable agile and fast on-the-fly adaptation capability in a spiking neural network. When incorporating emerging nanoscale resistive non-volatile memory (NVM) devices, with
Saxena, Vishal, Wu, Xinyu
core   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

Advanced Intelligent Systems, EarlyView.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee, Changha Kim, Geun Tae Park, Seung Hun Baek, Myeong Su Shin, Woo Young Choi   +5 more
wiley   +1 more source

A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Nanoscale Research Letters, 2018
Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the ...
Yun-Feng Kao, Wei Cheng Zhuang, Chrong-Jung Lin, Ya-Chin King   +3 more
doaj   +1 more source

A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography. [PDF]

Adv Sci (Weinh)
The optoelectronic resistive random‐access memory (RRAM) with the integrated function of perception, storage and intrinsic randomness displays promising applications in the hardware level in‐sensor image cryptography.
Yang Q, Kang Y, Zhang C, Chen H, Zhang T, Bian Z, Su X, Xu W, Sun J, Wang P, Xu Y, Yu B, Zhao Y.   +12 more
europepmc   +2 more sources

SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography [PDF]

, 2014
textA highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography. The average nano-pillar height and diameter are 1.3 μm and
Ji, Li, active 21st century
core