Results 91 to 100 of about 4,641 (217)

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

, 2016
On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO$_{2-x}$) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC$_x$) at the surface during vacuum annealing at temperatures as low as 600 {\deg}C is ...
Alff, L., Breuer, U., Hildebrandt, E., Komissinskiy, P., Kurian, J., Rodenbücher, C., Sharath, S. U., Szot, K., Waser, R.   +8 more
core   +1 more source

Chemically‐Linked Heterostructures of Palladium Nanosheets and 2H‐MoS2

Small, EarlyView.
The photoresponse of MoS2 devices is extended to the near‐infrared region (up to 1700 nm) through chemical connection to Pd nanosheets (PdNS). A maleimide is used for covalent connection to MoS2, and a phenyl bromide moiety for linkage to the PdNS. In the absence of the chemical linker, van der Waals heterostructures show poorer enhancement of the ...
Ramiro Quirós‐Ovies, Pablo Bastante, Simon Hettler, Víctor Vega‐Mayoral, Sergio Aina, Vasileios Balos, Thomas Pucher, Andrés Castellanos‐Gomez, Raul Arenal, Juan Cabanillas‐Gonzalez, Emilio M. Pérez, Jesús Santamaría, Víctor Sebastian   +12 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Prediction of semi-metallic tetragonal Hf2O3 and Zr2O3 from first-principles

, 2012
A tetragonal phase is predicted for Hf2O3 and Zr2O3 using density functional theory. Starting from atomic and unit cell relaxations of substoichiometric monoclinic HfO2 and ZrO2, such tetragonal structures are only reached at zero temperature by ...
Blaise, Philippe, Fonseca, Leonardo R. C., Nishi, Yoshio, Xue, Kan-Hao   +3 more
core   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, Volume 36, Issue 23, 19 March 2026.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Memristive Non-Volatile Memory Based on Graphene Materials

Micromachines, 2020
Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in ...
Zongjie Shen, Chun Zhao, Yanfei Qi, Ivona Z. Mitrovic, Li Yang, Jiacheng Wen, Yanbo Huang, Puzhuo Li, Cezhou Zhao   +8 more
doaj   +1 more source

Multi‐State Probabilistic Computing Using Floating‐Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems

Advanced Materials, Volume 38, Issue 16, 17 March 2026.
This work introduces a multi‐state probabilistic computing system based on Potts‐model p‐bits using stochastic switching floating body metal oxide semiconductor field effect transistors (FB‐MOSFETs). By employing drain‐voltage sharing and one‐hot sampling, the system achieves controllable probabilistic behavior.
Sunwoo Cheong, Soo Hyung Lee, Janguk Han, Jun‐Young Park, Dong Hoon Shin, Yoon Ho Jang, Sung Keun Shim, Sungho Kim, Cheol Seong Hwang, Joon‐Kyu Han   +9 more
wiley   +1 more source

Low-Rank Compensation in Hybrid 3D-RRAM/SRAM Computing-in-Memory System for Edge Computing

Eng
Artificial intelligence (AI) has made significant strides, with computing-in-memory (CIM) emerging as a key enabler for energy-efficient AI acceleration.
Weiye Tang, Long Nie, Cailian Ma, Hao Wu, Yiyang Yuan, Shuaidi Zhang, Qihao Liu, Feng Zhang   +7 more
doaj   +1 more source

Triboelectric Tactile Transducers for Neuromorphic Sensing and Synaptic Emulation: Materials, Architectures, and Interfaces

Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar, Arunkumar Chandrasekhar, Poongundran Selvaprabhu   +2 more
wiley   +1 more source

Total dose hardness of TiN/HfOx/TiN resistive random access memory

, 2014
Resistive random access memory based on TiN/HfOx/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and
de Groot, Kees, Huang, Ruomeng, Morgan, Katrina, Potter, Kenneth, Redman-White, William, Shaw, Chris   +5 more
core   +1 more source