Results 101 to 110 of about 4,641 (217)
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee +5 more
wiley +1 more source
, 2014 The rapid development of computing technology is reflected in the fact that industry has consistently doubled the number of transistors per unit area on a semiconductor wafer every two years.
Kenyon, AJ, Mehonic, A
core
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM). [PDF]
Micromachines (Basel), 2021 Zahoor F +4 more
europepmc +1 more source
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.A 48 × 48 ferroelectric tunnel junction (FTJ) crossbar array is fabricated and optimized through postmetallization annealing, enabling stable polarization switching and reliable multilevel conductance programming. Half‐bias operation, accurate vector–matrix multiplication with less than 1% error, and CIFAR‐10 image classification with near‐software ...
Sangwook Youn, Hwiho Hwang, Hyungjin Kim
wiley +1 more source
Advanced oxide based resistive random access memories (RRAMs) : switching mechanisms and material solutions [PDF]
, 2019 This thesis reports a study of the resistive switching phenomena in oxide based material systems, practically hafnium and graphene oxide based Resistive Random Access Memories (RRAMs), in aspects of device fabrication, electrical and physical characterization, and theoretical calculation. Both hafnium and graphene oxide based RRAMs have been fabricated.
openaire +3 more sources
Small, Volume 22, Issue 14, 6 March 2026.A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong +21 more
wiley +1 more source
Small, Volume 22, Issue 16, 17 March 2026.This review outlines how triboelectric self‐powered tactile sensors can be integrated with neuromorphic devices to emulate human touch. It summarizes current coupling strategies, operational modes, and synaptic functions enabled by triboelectric nanogerator (TENG)‐based systems, while highlighting key mechanisms, performance considerations, and future ...
Fabrizio Torricelli, Giuseppina Pace
wiley +1 more source
Photo‐synaptic Memristor Devices from Solution‐processed Ga2O3 Thin Films
Advanced Electronic MaterialsHardware integration with biological synaptic function is the key to realizing brain‐like computing. Resistive Random Access Memory (RRAM), with a similar structure to biological synapses, are important candidate for the simulation of biological synaptic
Wei Wang +8 more
doaj +1 more source
Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019 High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis +11 more
doaj +1 more source