Results 111 to 120 of about 4,641 (217)

Compliance-free, analog RRAM devices based on SnOx

Scientific Reports
Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly
Suresh Kumar Garlapati, Firman Mangasa Simanjuntak, Spyros Stathopoulos, Syed Jalaluddeen A, Mari Napari, Themis Prodromakis   +5 more
doaj   +1 more source

The Efficacy of Programming Energy Controlled Switching in Resistive Random Access Memory (RRAM)

, 2017
Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and Dynamic RAM (DRAM) are based on charge storage. The semiconductor industry has relied on cell miniaturization to increase the performance and density of memory technology, while simultaneously decreasing the cost per bit.
openaire   +2 more sources

Rapid Temperature Annealing Effect on Bipolar Switching and Electrical Properties of SiC Thin Film-Resistant Random-Access Memory Devices

Engineering Proceedings
In this study, silicon carbide (SiC) thin films for resistive random-access memory (RRAM) devices were successfully prepared using the radio-frequency magnetron sputtering method at deposition powers of 50 and 75 W for 1 h.
Kai-Huang Chen, Ming-Cheng Kao, Yao-Chin Wang, Hsin-Chin Chen, Chin-Chueh Huang Kao   +4 more
doaj   +1 more source

Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor

, 2012
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates ...
Rocha, Paulo R. F., Kiazadeh, Asal, Chen, Q., Gomes, Henrique L.   +3 more
openaire   +1 more source

Modellizzazione e funzionamento della Resistive Random Access Memory (RRAM)

Le memorie RRAM (Resistive Random Access Memories) hanno recentemente mostrato caratteristiche eccezionali come alta scalabilità, alta velocità, alta densità e funzionamento a bassa energia. In questo elaborato viene presentato in generale il funzionamento della RRAM; dalla sua fabbricazione fino all'architettura della memoria. Nella prima parte del
openaire   +1 more source

Agar-Based Resistive Switching Memory for Neuromorphic Applications. [PDF]

ACS Omega
Chen HC, Kao IC, Lai KJ, Chen CY, Chang YC.   +4 more
europepmc   +1 more source

Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM Devices. [PDF]

Micromachines (Basel)
Chen KH, Kao MC, Chen HC, Wang YC, Cheng CM, Xu WM.   +5 more
europepmc   +1 more source

Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM. [PDF]

Sci Rep
Moazzeni A, Riyahi Madvar H, Hamedi S, Kordrostami Z.   +3 more
europepmc   +1 more source

Vertical Self-Rectifying Memristive Arrays for Page-Wise Parallel Logic and Arithmetic Processing. [PDF]

Adv Mater
Son K, Cho JM, Shin DH, Kim YR, Ghenzi N, Cheong S, Kim BS, Lee JK, Kim S, Choi W, Lee SH, Han J, Hwang CS.   +12 more
europepmc   +1 more source

Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory Devices. [PDF]

Micromachines (Basel)
Chen KH, Cheng CM, Kao MC, Chen HC, Wang YC, Tsai YH.   +5 more
europepmc   +1 more source