Results 111 to 120 of about 11,242 (219)

Total dose hardness of TiN/HfOx/TiN resistive random access memory

, 2014
Resistive random access memory based on TiN/HfOx/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and
de Groot, Kees, Huang, Ruomeng, Morgan, Katrina, Potter, Kenneth, Redman-White, William, Shaw, Chris   +5 more
core   +1 more source

Chemically‐Linked Heterostructures of Palladium Nanosheets and 2H‐MoS2

Small, EarlyView.
The photoresponse of MoS2 devices is extended to the near‐infrared region (up to 1700 nm) through chemical connection to Pd nanosheets (PdNS). A maleimide is used for covalent connection to MoS2, and a phenyl bromide moiety for linkage to the PdNS. In the absence of the chemical linker, van der Waals heterostructures show poorer enhancement of the ...
Ramiro Quirós‐Ovies, Pablo Bastante, Simon Hettler, Víctor Vega‐Mayoral, Sergio Aina, Vasileios Balos, Thomas Pucher, Andrés Castellanos‐Gomez, Raul Arenal, Juan Cabanillas‐Gonzalez, Emilio M. Pérez, Jesús Santamaría, Víctor Sebastian   +12 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Self‐Powered Neuromorphic Touch Sensors Based on Triboelectric Devices: Current Approaches and Open Challenges

Small, EarlyView.
This review outlines how triboelectric self‐powered tactile sensors can be integrated with neuromorphic devices to emulate human touch. It summarizes current coupling strategies, operational modes, and synaptic functions enabled by triboelectric nanogerator (TENG)‐based systems, while highlighting key mechanisms, performance considerations, and future ...
Fabrizio Torricelli, Giuseppina Pace
wiley   +1 more source

Advanced oxide based resistive random access memories (RRAMs) : switching mechanisms and material solutions [PDF]

, 2019
This thesis reports a study of the resistive switching phenomena in oxide based material systems, practically hafnium and graphene oxide based Resistive Random Access Memories (RRAMs), in aspects of device fabrication, electrical and physical characterization, and theoretical calculation. Both hafnium and graphene oxide based RRAMs have been fabricated.
openaire   +3 more sources

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
High static power associated with static random access memory (SRAM) represents a bottleneck in increasing the amount of on-chip memory. Novel, emerging nonvolatile memories such as spintransfer torque magnetic random access memory (STT-RAM), resistive ...
Dayane Reis, Kai Ni, Wriddhi Chakraborty, Xunzhao Yin, Martin Trentzsch, Stefan Dunkel, Thomas Melde, Johannes Muller, Sven Beyer, Suman Datta, Michael T. Niemier, Xiaobo Sharon Hu   +11 more
doaj   +1 more source

Bayesian Inference via GeTex‐OTS Based Stochastic Synapse for Uncertainty‐Aware Medical Diagnostics

SmartMat, Volume 7, Issue 1, February 2026.
This work reports a GeTex ovonic threshold switch integrated into a compact 1S1T1R stochastic synapse that directly realizes an MC‐Dropconnect Bayesian neural network. Tunable probabilistic switching enables uncertainty‐aware COVID‐19 diagnosis and MNIST recognition while remaining compatible with conventional 1T1R CIM architectures, highlighting a ...
Xinyu Wen, Lun Wang, Kuan Wang, Vivian Zhao, Zixuan Liu, Kexun He, Jianguo Yang, Hao Tong, Xiangshui Miao, Yuhui He   +9 more
wiley   +1 more source

Photo‐synaptic Memristor Devices from Solution‐processed Ga2O3 Thin Films

Advanced Electronic Materials
Hardware integration with biological synaptic function is the key to realizing brain‐like computing. Resistive Random Access Memory (RRAM), with a similar structure to biological synapses, are important candidate for the simulation of biological synaptic
Wei Wang, Xiangxiang Gao, Zhenhua Lin, Haoyu Bai, Dongsheng Cui, Jie Su, Jincheng Zhang, Yue Hao, Jingjing Chang   +8 more
doaj   +1 more source

Compliance-free, analog RRAM devices based on SnOx

Scientific Reports
Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly
Suresh Kumar Garlapati, Firman Mangasa Simanjuntak, Spyros Stathopoulos, Syed Jalaluddeen A, Mari Napari, Themis Prodromakis   +5 more
doaj   +1 more source

Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

Embedded memory, which heavily relies on the manufacturing process, has been widely adopted in various industrial applications. As the field of embedded memory continues to evolve, innovative strategies are emerging to enhance performance.
Zijian Wang, Yixian Song, Guobin Zhang, Qi Luo, Kai Xu, Dawei Gao, Bin Yu, Desmond K. Loke, Shuai Zhong, Yishu Zhang   +9 more
semanticscholar   +1 more source