A Fully Si-Compatible Ni/Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>/<i>p</i> <sup>+</sup> Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications. [PDF]
ACS OmegaLee Y +5 more
europepmc +1 more source
In-memory analog computing for non-negative matrix factorization. [PDF]
Nat CommunWang S +6 more
europepmc +1 more source
The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]
Materials (Basel)Jeżak P +3 more
europepmc +1 more source
Optimizing TiO2/HfO2 Multilayer RRAM for Self-Rectifying Characteristics. [PDF]
Micromachines (Basel)Nam CH, Baek MH.
europepmc +1 more source
Experimental and Theoretical Study of Multifilamentary Resistive Switching in Nanoscale Transition Metal Oxide Films. [PDF]
ACS OmegaFedotov MI +4 more
europepmc +1 more source
Tunable Hydrogen Dynamics Under Electrical Bias for Neuromorphic Memory Applications. [PDF]
ACS Appl Mater InterfacesNoh HY +6 more
europepmc +1 more source
Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]
RSC AdvXiao A +9 more
europepmc +1 more source
A hardware demonstration of a universal programmable RRAM-based probabilistic computer for molecular docking. [PDF]
Nat CommunHe Y +8 more
europepmc +1 more source
Investigation of key performance metrics in TiO<sub>X</sub>/TiN based resistive random-access memory cells. [PDF]
Sci RepZink BR +4 more
europepmc +1 more source
Impact of Reset Pulse Width on Gradual Conductance Programming in Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>-Based RRAM. [PDF]
Micromachines (Basel)Lim H, Shim W, Kim TH.
europepmc +1 more source