The Efficacy of Programming Energy Controlled Switching in Resistive Random Access Memory (RRAM)
Current state-of-the-art memory technologies such as FLASH, Static Random Access Memory (SRAM) and Dynamic RAM (DRAM) are based on charge storage. The semiconductor industry has relied on cell miniaturization to increase the performance and density of memory technology, while simultaneously decreasing the cost per bit.
openaire +2 more sources
Hardware implementation of RRAM based binarized neural networks
Resistive switching random access memory (RRAM) has been explored to accelerate the computation of neural networks. RRAM with linear conductance modulation is usually required for the efficient weight updating during the online training according to the ...
Peng Huang +7 more
doaj +1 more source
In this study, silicon carbide (SiC) thin films for resistive random-access memory (RRAM) devices were successfully prepared using the radio-frequency magnetron sputtering method at deposition powers of 50 and 75 W for 1 h.
Kai-Huang Chen +4 more
doaj +1 more source
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates ...
Rocha, Paulo R. F. +3 more
openaire +1 more source
Modellizzazione e funzionamento della Resistive Random Access Memory (RRAM)
Le memorie RRAM (Resistive Random Access Memories) hanno recentemente mostrato caratteristiche eccezionali come alta scalabilità€, alta velocità€, alta densità€ e funzionamento a bassa energia. In questo elaborato viene presentato in generale il funzionamento della RRAM; dalla sua fabbricazione fino all'architettura della memoria. Nella prima parte del
openaire +1 more source
Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM Devices. [PDF]
Chen KH +5 more
europepmc +1 more source
Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM. [PDF]
Moazzeni A +3 more
europepmc +1 more source
Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory Devices. [PDF]
Chen KH +5 more
europepmc +1 more source
A Fully Si-Compatible Ni/Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>/<i>p</i> <sup>+</sup> Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications. [PDF]
Lee Y +5 more
europepmc +1 more source

