Overcoming Volatility in Ion Gel via Ag Doping for Nonvolatile Memristive Switching. [PDF]
Nam J, Jeong J, Lee S, Kim Y, Jeon W.
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Polarity-Controlled Volatile HfO<sub>2</sub> Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing. [PDF]
Jang Y, Hwang C, Chae M, Kim T, Kim HD.
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Nickel-Assisted Laser Oxidation of WSe<sub>2</sub> Layered Films for Spatially Controlled WO<sub>3</sub> Patterning Process toward Resistive Memory and Molecular Sensing. [PDF]
Hsu YC +7 more
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Design of an RRAM-Based Joint Model for Embedded Cellular Smartphone Self-Charging Device. [PDF]
Vishwakarma A +4 more
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Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. [PDF]
Wang YC +6 more
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Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena. [PDF]
Kim H, Kim S, Cho JY, Lee SH, Kim MH.
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Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices. [PDF]
Chen KH, Kao MC, Chen HC, Wang YC.
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Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications. [PDF]
Moore A, Hou Y, Li L.
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All HfO<sub><i>x</i></sub>-Resistive Switches with the Conducting Oxygen Vacancy Exchange Layer and Self-Limited Oxide Layer. [PDF]
Schreyer P +14 more
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A Reconfigurable Memristor-Based Computing-in-Memory Circuit for Content-Addressable Memory in Sensor Systems. [PDF]
Hu H +12 more
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