The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]
Materials (Basel)Jeżak P +3 more
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Optimizing TiO2/HfO2 Multilayer RRAM for Self-Rectifying Characteristics. [PDF]
Micromachines (Basel)Nam CH, Baek MH.
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Experimental and Theoretical Study of Multifilamentary Resistive Switching in Nanoscale Transition Metal Oxide Films. [PDF]
ACS OmegaFedotov MI +4 more
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Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]
RSC AdvXiao A +9 more
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A hardware demonstration of a universal programmable RRAM-based probabilistic computer for molecular docking. [PDF]
Nat CommunHe Y +8 more
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Investigation of key performance metrics in TiO<sub>X</sub>/TiN based resistive random-access memory cells. [PDF]
Sci RepZink BR +4 more
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Impact of Reset Pulse Width on Gradual Conductance Programming in Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>-Based RRAM. [PDF]
Micromachines (Basel)Lim H, Shim W, Kim TH.
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Polarity-Controlled Volatile HfO<sub>2</sub> Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing. [PDF]
Adv Sci (Weinh)Jang Y, Hwang C, Chae M, Kim T, Kim HD.
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Nickel-Assisted Laser Oxidation of WSe<sub>2</sub> Layered Films for Spatially Controlled WO<sub>3</sub> Patterning Process toward Resistive Memory and Molecular Sensing. [PDF]
ACS Appl Mater InterfacesHsu YC +7 more
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Design of an RRAM-Based Joint Model for Embedded Cellular Smartphone Self-Charging Device. [PDF]
Micromachines (Basel)Vishwakarma A +4 more
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