The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]
Jeżak P +3 more
europepmc +1 more source
Optimizing TiO2/HfO2 Multilayer RRAM for Self-Rectifying Characteristics. [PDF]
Nam CH, Baek MH.
europepmc +1 more source
Experimental and Theoretical Study of Multifilamentary Resistive Switching in Nanoscale Transition Metal Oxide Films. [PDF]
Fedotov MI +4 more
europepmc +1 more source
Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]
Xiao A +9 more
europepmc +1 more source
A hardware demonstration of a universal programmable RRAM-based probabilistic computer for molecular docking. [PDF]
He Y +8 more
europepmc +1 more source
Investigation of key performance metrics in TiO<sub>X</sub>/TiN based resistive random-access memory cells. [PDF]
Zink BR +4 more
europepmc +1 more source
Impact of Reset Pulse Width on Gradual Conductance Programming in Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>-Based RRAM. [PDF]
Lim H, Shim W, Kim TH.
europepmc +1 more source
Polarity-Controlled Volatile HfO<sub>2</sub> Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing. [PDF]
Jang Y, Hwang C, Chae M, Kim T, Kim HD.
europepmc +1 more source
Nickel-Assisted Laser Oxidation of WSe<sub>2</sub> Layered Films for Spatially Controlled WO<sub>3</sub> Patterning Process toward Resistive Memory and Molecular Sensing. [PDF]
Hsu YC +7 more
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Design of an RRAM-Based Joint Model for Embedded Cellular Smartphone Self-Charging Device. [PDF]
Vishwakarma A +4 more
europepmc +1 more source

