Resistive random access memory rram

2012 IEEE Silicon Nanoelectronics Workshop (SNW), 2012
This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM.
Yi Wu +3 more
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Verilog-A compact model for oxide-based resistive random access memory (RRAM)

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014
We demonstrate a dynamic Verilog-A RRAM compact model capable of simulating real-time DC cycling and pulsed operation device behavior, including random variability that is inherent to RRAM. This paper illustrates the physics and capabilities of the model. The model is verified using different sets of experimental data.
Zizhen Jiang +5 more
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Access Strategies for Resistive Random Access Memory (RRAM)

ECS Transactions, 2012
In an RRAM array, it is important to avoid sneak current paths that result in inadvertent, non-negligible voltage and current inputs to unselected cells. At the same time, care must be taken not to allow excessive voltages or currents to selected cells, which could result in damage.
Frederick T. Chen +14 more
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Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

2018
Detailed operational and switching characteristics for metal-oxide resistive random access memory (RRAM) are presented, along with materials/vacancy engineering ramifications for the switching operations. The reported experimental data is consistent with a physical picture of the RRAM switching as caused by oxidation/reduction processes in a conductive
David C. Gilmer, Gennadi Bersuker
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rram
resistive switching
7. clean energy

non-volatile memory
physics
synaptic plasticity

resistive random access memory
biotechnology
neuromorphic computing