Results 161 to 170 of about 4,641 (217)

Recent progress of resistive switching random access memory (RRAM)

2012 IEEE Silicon Nanoelectronics Workshop (SNW), 2012
This paper gives an overview of recent works on metal oxide resistive switching memory (RRAM). We explored the stochastic nature of resistive switching in metal oxide RRAM and a 2-D analytical solver was established to explain the switching parameter variations in HfOx-based RRAM.
Yi Wu, Shimeng Yu, Ximeng Guan, H.-S. Philip Wong   +3 more
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Access Strategies for Resistive Random Access Memory (RRAM)

ECS Transactions, 2012
In an RRAM array, it is important to avoid sneak current paths that result in inadvertent, non-negligible voltage and current inputs to unselected cells. At the same time, care must be taken not to allow excessive voltages or currents to selected cells, which could result in damage.
Frederick T. Chen, Yu-Sheng Chen, Heng-Yuan Lee, Wei-Su Chen, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, Yi-Ying Liao, Pang-Shiu Chen, Shyh-Shyuan Sheu, Pi-Feng Chiu, Wen-Ping Lin, Chih-He Lin, Ming-Jinn Tsai, Tzu-Kun Ku   +14 more
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Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

2019 International Conference on Electromagnetics in Advanced Applications (ICEAA), 2019
In this paper, the electrothermal performance of large-scale resistive random access memory (RRAM) array is studied using an in-house developed parallel simulator. To realize the capability for parallel simulation, a high-performance computing scheme based on the mixed finite element method and finite volume method combining the domain decomposition ...
Da-Wei Wang, Wen-Yan Yin, Wenchao Chen, Wen-Sheng Zhao   +3 more
openaire   +1 more source

Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor

MRS Proceedings, 2011
ABSTRACTThis work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s).
Rocha, P. F., Gomes, Henrique L., Kiazadeh, Asal, Chen, Q., De Leeuw, D. M., Meskers, S. C. J.   +5 more
openaire   +3 more sources

Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM)

2010 IEEE Nanotechnology Materials and Devices Conference, 2010
Resistive switching characteristics are investigated for aluminum (Al) inserted NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. In order to evaluate high-density RRAM with low switching current, we have shown the relationships between various important analytical parameters and reset current reduction.
Kyung-Chang Ryoo, Jeong-Hoon Oh, Sung-hun Jung, Byung-Gook Park   +3 more
openaire   +1 more source

Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)

Digest. International Electron Devices Meeting,, 2003
A novel nonvolatile memory Colossal Magnetoresistive (CMR) thin film resistor for Resistance RAM (RRAM) application has been characterized. A 1RIT RRAM test circuit based on 0.5 /spl mu/m CMOS has been fabricated. RRAM is a low power high-speed memory technology. The memory cell programming pulse is less than 5 V and pulse width as narrow as 10 ns. The
W.W. Zhuang, W. Pan, B.D. Ulrich, J.J. Lee, L. Stecker, A. Burmaster, D.R. Evans, S.T. Hsu, M. Tajiri, A. Shimaoka, K. Inoue, T. Naka, N. Awaya, A. Sakiyama, Y. Wang, S.Q. Liu, N.J. Wu, A. Ignatiev   +17 more
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Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power Application

Journal of Nanoscience and Nanotechnology, 2012
An interface-engineered resistive random access memory (RRAM) using bilayer transition metal oxide (TMO) is presented for improving unipolar resistive-switching characteristics. The experiment and simulation data show that better resistive switching characteristics and superb uniformity can be realized by inserting a thin AIOx insertion layer between ...
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook   +4 more
openaire   +3 more sources

Dimensional Effect of Non-Polar Resistive Random Access Memory (RRAM) for Low-Power Memory Application

Journal of Nanoscience and Nanotechnology, 2012
The relationships between the resistive cell dimension and the related analytical parameters such as the forming voltage, set voltage, and reset current were investigated to implement high-density and low-power unipolar RRAM. It was shown that the formation process in unipolar switching is strongly related to the cell dimension in the sub-nm region ...
Kyung-Chang, Ryoo, Jeong-Hoon, Oh, Sunghun, Jung, Hongsik, Jeong, Byung-Gook, Park   +4 more
openaire   +2 more sources

Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

2018
Detailed operational and switching characteristics for metal-oxide resistive random access memory (RRAM) are presented, along with materials/vacancy engineering ramifications for the switching operations. The reported experimental data is consistent with a physical picture of the RRAM switching as caused by oxidation/reduction processes in a conductive
David C. Gilmer, Gennadi Bersuker
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Simulation study of dimensional effect on bipolar resistive random access memory (RRAM)

2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013
The dependency of the RRAM device electrical parameters such as set voltage, reset current and resistance on the RRAM cell dimensional scalability is investigated with Monte Carlo simulation to optimize the power consumption of bipolar RRAM. It is found in the simulation that the switching process in bipolar RRAM is related to the cell dimension in the
Liu Kai, Zhang Kailiang, Wang Fang, Zhao Jinshi, Wei Jun   +4 more
openaire   +1 more source