Results 11 to 20 of about 11,242 (219)
APL Materials, 2023 With the arrival of the era of big data, the conventional von Neumann architecture is now insufficient owing to its high latency and energy consumption that originate from its separated computing and memory units. Neuromorphic computing, which imitates biological neurons and processes data through parallel procedures between artificial neurons, is now ...
Jeong Hyun Yoon +4 more
openaire +3 more sources
ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
Crystals, 2023 In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes.
Ewelina Nowak +2 more
openaire +3 more sources
Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM) [PDF]
2011 3rd IEEE International Memory Workshop (IMW), 2010 Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories.
H.-S. Philip Wong +7 more
openaire +2 more sources
Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM). [PDF]
Micromachines (Basel), 2021 Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated.
Zahoor F +4 more
europepmc +2 more sources
Nanoscale Research Letters, 2023 The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable.
Furqan Zahoor +6 more
doaj +2 more sources
Vertical Self-Rectifying Memristive Arrays for Page-Wise Parallel Logic and Arithmetic Processing. [PDF]
Adv MaterThis study proposes a page‐wise logic‐in‐memory architecture realized in a 3D vertical resistvie random‐access memory array of self‐rectifying memristors. By introducing intra‐ and inter‐page logic primitives, the system enables Boolean and arithmetic operations to be executed directly within the memory.
Son K +12 more
europepmc +2 more sources
Electronics, 2021 The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems.
Furqan Zahoor +6 more
semanticscholar +1 more source
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
doaj +1 more source
Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
APL Materials, 2022 This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices.
Minjae Kim +5 more
doaj +1 more source
Impact of laser attacks on the switching behavior of RRAM devices [PDF]
, 2020 The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory ...
Arumi Delgado, Daniel +7 more
core +2 more sources