Results 11 to 20 of about 4,641 (217)

Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing. [PDF]

Chem Rev
In the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory devices must evolve significantly to provide the necessary bit capacity, performance, and energy efficiency needed in computation.
Ielmini D, Pedretti G.
europepmc   +3 more sources

Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM

Materials Research Express, 2022
Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes.
Jiaping Li, Xin Zhou, Liu Xu, Jiale Wang, Binhe Wu, Chunrui Wang   +5 more
doaj   +1 more source

ZnO based RRAM performance enhancement by 100 MeV Ag9+ irradiation

Applied Surface Science Advances, 2022
This paper demonstrates the fabrication of a thin film of Zinc Oxide (ZnO) by RF sputtering on Indium Tin Oxide (ITO) substrate for Resistive Random-Access Memory (RRAM) application.
Shikha Kaushik, Sujata Pandey, Rahul Singhal, Ranjit Kumar   +3 more
doaj   +1 more source

A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities. [PDF]

Sci Rep
A highly efficient approach for synthesizing a supramolecular metallogel of Co(II) ions, denoted as CoA-TA, has been established under room temperature and atmospheric pressure conditions. This method employs the metal-coordinating organic ligand benzene-1,3,5-tricarboxylic acid as a low molecular weight gelator (LMWG) in DMF solvent.
Roy A, Dhibar S, Kumar S, Karmakar K, Garg P, Ruidas P, Bhattacharjee S, Bera A, Saha B, Ray SJ.   +9 more
europepmc   +4 more sources

Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM) [PDF]

2011 3rd IEEE International Memory Workshop (IMW), 2010
Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories.
H.-S. Philip Wong, SangBum Kim, Byoungil Lee, Marissa A. Caldwell, Jiale Liang, Yi Wu, Rakesh Gnana David Jeyasingh, Shimeng Yu   +7 more
openaire   +1 more source

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory [PDF]

, 2015
Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps.
Byun, Kwangsub, Chang, Yao-Feng, Fowler, Burt, Lee, Jack C., Zhou, Fei   +4 more
core   +1 more source

Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles [PDF]

, 2011
It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large
Kiazadeh, Asal, Rocha, P. R., Chen, Q., Gomes, Henrique L.   +3 more
openaire   +2 more sources

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Nanoscale Research Letters, 2019
Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding, Yulin Feng, Peng Huang, Lifeng Liu, Jinfeng Kang   +4 more
doaj   +1 more source

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]

, 2014
An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng, Chen, Yen-Ting, Fowler, Burt W., Lee, Jack C., Wang, Yanzhen, Xue, Fei, Zhou, Fei   +6 more
core   +1 more source

Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures

IEEE Journal of the Electron Devices Society, 2016
Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang, Peng Huang, Bin Gao, Haitong Li, Zhe Chen, Yudi Zhao, Chen Liu, Lifeng Liu, Xiaoyan Liu   +8 more
doaj   +1 more source