Results 21 to 30 of about 4,641 (217)

Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite Films for Resistive Switching

open access: yesAdvanced Electronic Materials, 2022
Multifunctional nonvolatile photoelectronic memory devices with multilevel storage and logic operation are expected to perform logic‐in‐memory computing tasks and overcome the von Neumann bottleneck.
Jiacheng Li   +5 more
doaj   +1 more source

Advanced physical modeling of SiOx resistive random access memories [PDF]

open access: yes, 2016
We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (
Asenov, Asen   +8 more
core   +1 more source

Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

open access: yesMaterials Research Express, 2022
We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park   +4 more
doaj   +1 more source

Modeling of Bilayer Modulated RRAM and Its Array Performance for Compute-in-Memory Applications

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023
This article presents a modified compact model of resistive random access memory (RRAM) with a tunneling barrier. The bilayer modulated RRAM can be integrated into a higher density array, reducing leakage current in standby mode.
Jia-Wei Lee   +3 more
doaj   +1 more source

Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping

open access: yesAdvanced Intelligent Systems, 2022
Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan   +7 more
doaj   +1 more source

Physical Simulation of Si-Based Resistive Random-Access Memory Devices [PDF]

open access: yes, 2015
We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been ...
Asenov, Asen   +3 more
core   +1 more source

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

open access: yesAdvances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu   +4 more
doaj   +1 more source

RRAM variability and its mitigation schemes [PDF]

open access: yes, 2016
Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories.
Amat, Esteve   +3 more
core   +1 more source

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current

open access: yesNanomaterials, 2022
With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen   +7 more
doaj   +1 more source

A hardware Markov chain algorithm realized in a single device for machine learning

open access: yesNature Communications, 2018
Despite the need to develop resistive random access memory (RRAM) devices for machine learning, RRAM array-based hardware methods for algorithm require external electronics.
He Tian   +6 more
doaj   +1 more source

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