Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM
Materials Research Express, 2022 Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes.
Jiaping Li +5 more
doaj +1 more source
ZnO based RRAM performance enhancement by 100 MeV Ag9+ irradiation
Applied Surface Science Advances, 2022 This paper demonstrates the fabrication of a thin film of Zinc Oxide (ZnO) by RF sputtering on Indium Tin Oxide (ITO) substrate for Resistive Random-Access Memory (RRAM) application.
Shikha Kaushik +3 more
doaj +1 more source
Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory [PDF]
, 2015 Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps.
Byun, Kwangsub +4 more
core +1 more source
Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles [PDF]
, 2011 It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large
Kiazadeh, Asal +3 more
openaire +2 more sources
Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Nanoscale Research Letters, 2019 Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding +4 more
doaj +1 more source
Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]
, 2014 An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng +6 more
core +1 more source
Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures
IEEE Journal of the Electron Devices Society, 2016 Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang +8 more
doaj +1 more source
Advanced Electronic Materials, 2022 Multifunctional nonvolatile photoelectronic memory devices with multilevel storage and logic operation are expected to perform logic‐in‐memory computing tasks and overcome the von Neumann bottleneck.
Jiacheng Li +5 more
doaj +1 more source
Modeling of Bilayer Modulated RRAM and Its Array Performance for Compute-in-Memory Applications
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 This article presents a modified compact model of resistive random access memory (RRAM) with a tunneling barrier. The bilayer modulated RRAM can be integrated into a higher density array, reducing leakage current in standby mode.
Jia-Wei Lee +3 more
doaj +1 more source
Advanced physical modeling of SiOx resistive random access memories [PDF]
, 2016 We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (
Asenov, Asen +8 more
core +1 more source