Results 41 to 50 of about 11,242 (219)

Variability characteristics of non-stoichiometric, low-cost silicon oxide resistive memory [PDF]

AIP Advances
Resistive-switching random access memory (RRAM) is an important class of data storage and computing devices. A recent technological trend requires RRAM devices to be manufactured in an environmentally and economically sound way.
Julia C. Rodrigues, Fitunerediate G. Gebeyehu, Pranav U. Choori, José Sánchez del Río Sáez, Ethan C. Ahn   +4 more
doaj   +1 more source

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device [PDF]

, 2016
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation).
Enrique Miranda, Hangbing Lv, Jordi Suñé, Meiyun Zhang, Ming Liu, Qi Liu, Shibing Long, Yang Li   +7 more
core   +3 more sources

Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement

AIP Advances, 2013
The refractory transition metal nitride (TMN) film Hafnium nitride (HfNx) was successfully prepared on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM) cells in Pt (top)/metal oxide/ HfNx (bottom) sandwich structure.
Qigang Zhou, Jiwei Zhai
doaj   +1 more source

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

IEEE Access, 2020
The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices.
Jianxun Sun, Yuan Bo Li, Yiyang Ye, Jun Zhang, Gang Yih Chong, Juan Boon Tan, Zhen Liu, Tupei Chen   +7 more
doaj   +1 more source

Effect of Hydrogen Annealing on Performances of BN-Based RRAM

Nanomaterials, 2023
BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high ...
Doowon Lee, Hee-Dong Kim
doaj   +1 more source

Spiking Neural Networks for Inference and Learning: A Memristor-based Design Perspective [PDF]

, 2019
On metrics of density and power efficiency, neuromorphic technologies have the potential to surpass mainstream computing technologies in tasks where real-time functionality, adaptability, and autonomy are essential.
Abbott, Bartolozzi, Bartolozzi, Benjamin, Bi, Bohte, Detorakis, Faisal, Fouda, Fouda, Furber, Gerstner, Gerstner, Goldberg, Gütig, Hinton, Hopfield, Huayaney, Hyvärinen, Ielmini, Indiveri, Isomura, Jolivet, Katz, Kim, Levy, Li, Lillicrap, Maass, Mead, Merolla, Moreno-Bote, Naous, Neftci, Neftci, Neftci, Paille, Park, Pfister, Prezioso, Puglisi, Qiao, Querlioz, Savin, Saïghi, Schultz, Shouval, Tiago, Urbanczik, Wan, Wang, Williams, Woo, Xie, Yarom, Yu, Yu   +56 more
core   +2 more sources

Spinel ferrites for resistive random access memory applications

Emergent Materials, 2023
Cutting edge science and technology needs high quality data storage devices for their applications in artificial intelligence and digital industries.
Ketankumar Gayakvad, Kaushik Somdatta, Vikas Mathe, Tukaram D. Dongale, M. W., Ketaki Patankar   +5 more
semanticscholar   +1 more source

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Nanoscale Research Letters, 2022
Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses.
Chandreswar Mahata, Muhammad Ismail, Myounggon Kang, Sungjun Kim   +3 more
doaj   +1 more source

Simplified ZrTiOx-based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode [PDF]

, 2014
A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO( x )/Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO( x )/Ni can be regarded as a resistive-switching random access ...
Cherng-En Sun, Chia-Chun Lin, You-Tai Chang, Yung-Hsien Wu   +3 more
core   +1 more source

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells [PDF]

, 2011
In this letter, we explore the influence of the Cu(x)Te(1-x) layer composition (0.2 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties.
Aratani K., C. Detavernier, D. J. Wouters, J. A. Kittl, K. Opsomer, Kund M., L. Altimime, L. Goux, M. Jurczak, R. Degraeve, R. Müller   +10 more
core   +1 more source