Results 51 to 60 of about 4,641 (217)

Tunable Switching Mechanisms in HfZrO2‐Based Tunnel Junctions for High‐Performance Synaptic Arrays

Advanced Science, EarlyView.
This work demonstrates hybrid switching in engineered HZO‐based FTJs, enabled by controlled interlayer design and oxygen scavenging dynamics. The combined switching mechanism produces robust multilevel conductance states in large crossbar arrays, offering a materials‐driven pathway toward scalable in‐memory computing with enhanced tunability and ...
Jiwon You, Jeong‐Han Kim, Minsuk Song, Been Kwak, Eun Chan Park, Manh‐Cuong Nguyen, Wonjun Shin, Jangsaeng Kim, Daewoong Kwon   +8 more
wiley   +1 more source

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Nanoscale Research Letters, 2023
The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable.
Furqan Zahoor, Fawnizu Azmadi Hussin, Usman Bature Isyaku, Shagun Gupta, Farooq Ahmad Khanday, Anupam Chattopadhyay, Haider Abbas   +6 more
doaj   +1 more source

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

, 2015
Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task.
Guo, Zhonglu, Sun, Zhimei, Zhou, Jian, Zhu, Linggang   +3 more
core   +1 more source

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

Accurate Inference With Inaccurate RRAM Devices: A Joint Algorithm-Design Solution

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Resistive random access memory (RRAM) is a promising technology for energy-efficient neuromorphic accelerators. However, when a pretrained deep neural network (DNN) model is programmed to an RRAM array for inference, the model suffers from accuracy ...
Gouranga Charan, Abinash Mohanty, Xiaocong Du, Gokul Krishnan, Rajiv V. Joshi, Yu Cao   +5 more
doaj   +1 more source

A novel read circuit for RRAM based on RC delay effect

Electronics Letters, 2023
In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit.
Jiabao Ye, Xuecheng Cui, Haoxiong Bi, Jifang Cao, Wannian Wang, Xiaoxin Xu, Dong Liu, Bing Chen   +7 more
doaj   +1 more source

A Fast Weight Transfer Method for Real-Time Online Learning in RRAM-Based Neuromorphic System

IEEE Access, 2022
In this work, a synaptic weight transfer method for a neuromorphic system based on resistive-switching random-access memory (RRAM) is proposed and validated.
Min-Hwi Kim, Sin-Hyung Lee, Sungjun Kim, Byung-Gook Park   +3 more
doaj   +1 more source

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

, 2015
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (
Bennett, S., Burroughs, T., Chong, H., Deora, S., Gausepohl, S., Ji, B. L., Johnson, C., Kaushik, V., Li, H., Liehr, M., Passaro, M., Piccirillo, J., Rodgers, M., Smalley, M., Stamper, H., Veksler, D., Vivekanand, S., Ye, Q.   +17 more
core   +1 more source

RRAM Based Random Bit Generation for Hardware Security Applications [PDF]

, 2016
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new
Arumi Delgado, Daniel, Manich Bou, Salvador, Pehl, Michael, Rodríguez Montañés, Rosa   +3 more
core   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source