Results 61 to 70 of about 4,641 (217)
Nanomaterials, 2023 Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications.
Li-Wen Wang +4 more
doaj +1 more source
The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique [PDF]
, 2018 IEEE Despite the tremendous efforts in the past decade devoted to the development of filamentary resistive-switching devices (RRAM), there is still a lack of in-depth understanding of its over-reset phenomenon. At higher reset stop voltages that exceed a
Chai, Z +11 more
core +2 more sources
Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
Advanced Electronic Materials, EarlyView.This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam +3 more
wiley +1 more source
Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals [PDF]
Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM ...
Chai, Z +6 more
core +1 more source
Unpredictable bits generation based on RRAM parallel configuration [PDF]
, 2018 In this letter a cell with the parallel combination of two TiN/Ti/HfO2/W resistive random access memory (RRAM) devices is studied for the generation of unpredictable bits.
Arumi Delgado, Daniel +5 more
core +2 more sources
Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices
, 2016 In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
Dongale, T. D. +10 more
openaire +2 more sources
ReRAM/CMOS Array Integration and Characterization via Design of Experiments
Advanced Electronic Materials, EarlyView.This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen +7 more
wiley +1 more source
Nanotechnology Reviews, 2021 Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties.
Cheong Kuan Yew +3 more
doaj +1 more source
Recent Advances in Flexible Resistive Random Access Memory
Applied System Innovation, 2022 Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and
Peng Tang +9 more
doaj +1 more source