Results 71 to 80 of about 4,641 (217)

RRAM Reliability/Performance Characterization through Array Architectures Investigations [PDF]

open access: yes, 2015
The reliability and performance characterization of each non-volatile memory technology requires the thorough investigation of dedicated array test structures that mimic the real operations of a fully functional integrated product.
Grossi, Alessandro   +4 more
core   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende   +4 more
wiley   +1 more source

Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories

open access: yesCrystals, 2019
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance
Jian-Yang Lin   +2 more
doaj   +1 more source

Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses

open access: yes, 2013
Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
core   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

open access: yesAdvanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices

open access: yesScientific Reports, 2020
Biological neural networks outperform current computer technology in terms of power consumption and computing speed while performing associative tasks, such as pattern recognition.
Finn Zahari   +5 more
doaj   +1 more source

New technology may help scale up memory storage capacity [PDF]

open access: yes, 2018
Silicon-based memory devices such as hard drives and flash drives are in high demand for gadgets that require storage. Conventional semiconductor material-based memory devices have limited scale-up ability to increase their storage capacity. Hence, there
J, Suryanarayana, Sahu, Dwipak
core  

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Glucose-based resistive random access memory for transient electronics

open access: yesJournal of Information Display, 2019
In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park   +3 more
doaj   +1 more source

Thermal reversible breakdown and resistivityswitching in hafnium dioxide [PDF]

open access: yes, 2011
HfO2 nanostructures are currently considered to be very promising for different applications including gate oxides in Si transistors and emerging nonvolatile memory cells such as resistive random access memory (RRAM).
Borisenko, V.E.   +6 more
core   +1 more source

Home - About - Disclaimer - Privacy