Results 71 to 80 of about 11,242 (219)

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

, 2015
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (
Bennett, S., Burroughs, T., Chong, H., Deora, S., Gausepohl, S., Ji, B. L., Johnson, C., Kaushik, V., Li, H., Liehr, M., Passaro, M., Piccirillo, J., Rodgers, M., Smalley, M., Stamper, H., Veksler, D., Vivekanand, S., Ye, Q.   +17 more
core   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

An overview of critical applications of resistive random access memory. [PDF]

Nanoscale Adv
The rapid advancement of new technologies has resulted in a surge of data, while conventional computers are nearing their computational limits. The prevalent von Neumann architecture, where processing and storage units operate independently, faces ...
Zahoor F, Nisar A, Bature UI, Abbas H, Bashir F, Chattopadhyay A, Kaushik BK, Alzahrani A, Hussin FA.   +8 more
europepmc   +2 more sources

Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals [PDF]

Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM ...
Chai, Z, Govoreanu, B, Ji, Z, Jurczak, M, Ma, J, Zhang, JF, Zhang, WD   +6 more
core   +1 more source

Unpredictable bits generation based on RRAM parallel configuration [PDF]

, 2018
In this letter a cell with the parallel combination of two TiN/Ti/HfO2/W resistive random access memory (RRAM) devices is studied for the generation of unpredictable bits.
Arumi Delgado, Daniel, Bargalló, Mireia, Campabadal, Francesca, Gómez Pau, Álvaro, Manich Bou, Salvador, Rodríguez Montañés, Rosa   +5 more
core   +2 more sources

Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices

, 2016
In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
Dongale, T. D., Khot, K. V., Mohite, S. V., Khandagale, S. S., Shinde, S. S., Moholkar, A. V., Rajpure, K. Y., Bhosale, P. N., Patil, P. S., Gaikwad, P. K., Kamat, R. K.   +10 more
openaire   +2 more sources

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation

Advanced Electronic Materials, EarlyView.
Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy   +3 more
wiley   +1 more source

Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application

Nanotechnology Reviews, 2021
Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties.
Cheong Kuan Yew, Tayeb Ilias Ait, Zhao Feng, Abdullah Jafri Malin   +3 more
doaj   +1 more source

Recent Advances in Flexible Resistive Random Access Memory

Applied System Innovation, 2022
Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and
Peng Tang, Junlong Chen, Tian Qiu, Honglong Ning, Xiao Fu, Muyun Li, Zuohui Xu, Dongxiang Luo, Rihui Yao, Junbiao Peng   +9 more
doaj   +1 more source

RRAM Reliability/Performance Characterization through Array Architectures Investigations [PDF]

, 2015
The reliability and performance characterization of each non-volatile memory technology requires the thorough investigation of dedicated array test structures that mimic the real operations of a fully functional integrated product.
Grossi, Alessandro, Olivo, Piero, Walczyk, Christian, Wenger, Christian, Zambelli, Cristian   +4 more
core   +1 more source