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RRAM variability and its mitigation schemes [PDF]
2016 26th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS), 2016 Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories.
Amat, Esteve +3 more
core +4 more sources
Investigation of key performance metrics in TiOX/TiN based resistive random-access memory cells [PDF]
Scientific ReportsResistive random-access memory (RRAM) is a promising beyond-CMOS technology due to its non-volatility, scalability, and high ON/OFF ratio. Furthermore, a single RRAM cell can operate as an analog resistor, meaning that it can be used in more novel ...
Brandon R. Zink +4 more
doaj +2 more sources
Quantum Dots for Resistive Switching Memory and Artificial Synapse [PDF]
NanomaterialsMemristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim +2 more
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The Synthesis Method of Logic Circuits Based on the NMOS-Like RRAM Gates
IEEE Access, 2021 The synthesis method of logic circuits based on the RRAM (Resistive Random Access Memory) devices is of great concern in recent years. Inspired by the CMOS-like RRAM based logic gates, this work proposes a NMOS-like RRAM gate family.
Xiaole Cui, Ye Ma, Feng Wei, Xiaoxin Cui
doaj +1 more source
RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures [PDF]
2020 25th Asia and South Pacific Design Automation Conference (ASP-DAC), 2020 The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a promising solution as they enable cheap fine grain technology co-integration with CMOS, fast switching
Tuli, Shikhar +3 more
openaire +1 more source
Effect of Hydrogen Annealing on Performances of BN-Based RRAM
Nanomaterials, 2023 BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high ...
Doowon Lee, Hee-Dong Kim
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 Resistive switching random access memory (RRAM) shows its potential to be a promising candidate as the basic in-memory computing unit for deep neural networks (DNN) accelerator design due to its non-volatile, low power, and small footprint properties ...
Chenglong Huang +5 more
doaj +1 more source
Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing
Nanomaterials, 2020 A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the ...
Lei Wu +3 more
doaj +1 more source
An RRAM Biasing Parameter Optimizer [PDF]
IEEE Transactions on Electron Devices, 2015 Research on memory devices is a highly active field, and many new technologies are being constantly developed. However, characterizing them and understanding how to bias for optimal performance are becoming an increasingly tight bottleneck. Here, we propose a novel technique for extracting biasing parameters, conducive to desirable switching behavior ...
Serb, Alexantrou +2 more
openaire +3 more sources
Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
APL Materials, 2022 This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices.
Minjae Kim +5 more
doaj +1 more source