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RRAM variability and its mitigation schemes [PDF]

open access: yes2016 26th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS), 2016
Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures, such as process variation due to their nano-scale structure have gained ...
Pouman, Peyman   +3 more
openaire   +5 more sources

Parasitic engineering for RRAM control

open access: greenSolid-State Electronics, 2018
The inevitable current overshoot which follows forming in filamentary RRAM devices is often perceived as a source of variability that should be minimized. This sentiment has led to efforts to curtail the overshoot by decreasing the parasitic capacitance using highly integrated 1T-1R or 1R-1R device structures. While this is readily achievable in single
Pragya R. Shrestha   +6 more
openalex   +4 more sources

RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures [PDF]

open access: yes2020 25th Asia and South Pacific Design Automation Conference (ASP-DAC), 2020
The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a promising solution as they enable cheap fine grain technology co-integration with CMOS, fast switching
Tuli, Shikhar   +3 more
openaire   +1 more source

An RRAM Biasing Parameter Optimizer [PDF]

open access: yesIEEE Transactions on Electron Devices, 2015
Research on memory devices is a highly active field, and many new technologies are being constantly developed. However, characterizing them and understanding how to bias for optimal performance are becoming an increasingly tight bottleneck. Here, we propose a novel technique for extracting biasing parameters, conducive to desirable switching behavior ...
Serb, Alexantrou   +2 more
openaire   +3 more sources

Graphene-based RRAM devices for neural computing

open access: yesFrontiers in Neuroscience, 2023
Resistive random access memory is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to build highly accurate crossbar arrays.
Rajalekshmi T. R   +3 more
openaire   +4 more sources

Simulations of RRAM-Based SSDs

open access: yes, 2017
In this chapter SSDExplorer, a fine-grained SSD simulator, is used to evaluate the possible impact of emerging non-volatile memories, such as Resistive RAM (RRAM), on future SSD architectures. Does it make sense to fully replace NANDs with one of the emerging memories? What’s the benefit?
Zuolo, Lorenzo   +3 more
openaire   +2 more sources

SiNx RRAMs performance with different stoichiometries

open access: yesSolid-State Electronics
The microstructure of SiNx is strongly affected by its stoichiometry, x. The stoichiometry of SiNx thin films can be modified by adjusting the gas flow rates during LPCVD deposition. The deficiency or excess of Si atoms enhance the formation of defects such as nitrogen vacancies, silicon dangling bonds etc., and thus can enable performance tuning of ...
Mavropoulis, A. E.   +5 more
openaire   +2 more sources

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