Results 91 to 100 of about 13,298 (199)

SiNx RRAMs performance with different stoichiometries

Solid-State Electronics
The microstructure of SiNx is strongly affected by its stoichiometry, x. The stoichiometry of SiNx thin films can be modified by adjusting the gas flow rates during LPCVD deposition. The deficiency or excess of Si atoms enhance the formation of defects such as nitrogen vacancies, silicon dangling bonds etc., and thus can enable performance tuning of ...
Mavropoulis, A. E., Pissanos, G., Vasileiadis, N., Normand, P., Sirakoulis, G. Ch., Dimitrakis, P.   +5 more
openaire   +2 more sources

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

RRAM based neuromorphic algorithms

, 2019
This submission is a report on RRAM based neuromorphic algorithms. This report basically gives an overview of the algorithms implemented on neuromorphic hardware with crossbar array of RRAM synapses. This report mainly talks about the work on deep neural network to spiking neural network conversion and its significance.
openaire   +2 more sources

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, Volume 36, Issue 23, 19 March 2026.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Multi‐State Probabilistic Computing Using Floating‐Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems

Advanced Materials, Volume 38, Issue 16, 17 March 2026.
This work introduces a multi‐state probabilistic computing system based on Potts‐model p‐bits using stochastic switching floating body metal oxide semiconductor field effect transistors (FB‐MOSFETs). By employing drain‐voltage sharing and one‐hot sampling, the system achieves controllable probabilistic behavior.
Sunwoo Cheong, Soo Hyung Lee, Janguk Han, Jun‐Young Park, Dong Hoon Shin, Yoon Ho Jang, Sung Keun Shim, Sungho Kim, Cheol Seong Hwang, Joon‐Kyu Han   +9 more
wiley   +1 more source

Rapid Temperature Annealing Effect on Bipolar Switching and Electrical Properties of SiC Thin Film-Resistant Random-Access Memory Devices

Engineering Proceedings
In this study, silicon carbide (SiC) thin films for resistive random-access memory (RRAM) devices were successfully prepared using the radio-frequency magnetron sputtering method at deposition powers of 50 and 75 W for 1 h.
Kai-Huang Chen, Ming-Cheng Kao, Yao-Chin Wang, Hsin-Chin Chen, Chin-Chueh Huang Kao   +4 more
doaj   +1 more source

Triboelectric Tactile Transducers for Neuromorphic Sensing and Synaptic Emulation: Materials, Architectures, and Interfaces

Advanced Energy and Sustainability Research, Volume 7, Issue 3, March 2026.
Triboelectric nanogenerators are vital for sustainable energy in future technologies such as wearables, implants, AI, ML, sensors and medical systems. This review highlights improved TENG neuromorphic devices with higher energy output, better stability, reduced power demands, scalable designs and lower costs.
Ruthran Rameshkumar, Arunkumar Chandrasekhar, Poongundran Selvaprabhu   +2 more
wiley   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee, Changha Kim, Geun Tae Park, Seung Hun Baek, Myeong Su Shin, Woo Young Choi   +5 more
wiley   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source

Ferroelectric Tunnel Junction Memristor Crossbar Array with Annealing Optimization for In‐Memory Computing

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
A 48 × 48 ferroelectric tunnel junction (FTJ) crossbar array is fabricated and optimized through postmetallization annealing, enabling stable polarization switching and reliable multilevel conductance programming. Half‐bias operation, accurate vector–matrix multiplication with less than 1% error, and CIFAR‐10 image classification with near‐software ...
Sangwook Youn, Hwiho Hwang, Hyungjin Kim
wiley   +1 more source