Results 101 to 110 of about 13,298 (199)

Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge

Nature Communications
CMOS-RRAM integration holds great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations and noise, leading to computational accuracy loss, increased ...
Jaeseoung Park, Ashwani Kumar, Yucheng Zhou, Sangheon Oh, Jeong-Hoon Kim, Yuhan Shi, Soumil Jain, Gopabandhu Hota, Erbin Qiu, Amelie L. Nagle, Ivan K. Schuller, Catherine D. Schuman, Gert Cauwenberghs, Duygu Kuzum   +13 more
doaj   +1 more source

High Perpendicular Anisotropy in Mo‐Inserted Mg Composite Free Layer for Nonvolatile Magnetoresistive Random Access Memory in 4K‐400K Universal Temperature Applications

Small, Volume 22, Issue 14, 6 March 2026.
A universal temperature‐friendly nonvolatile MRAM (UTF‐NVMRAM) operating from 4 to 400K is realized by optimizing the MgO/MgOx capping layer and incorporating Mo into the CoFeB composite‐free layer. This architecture minimizes temperature sensitivity in switching voltage and thermal stability factor while demonstrating potential CMOS back‐end‐of‐line ...
Ming‐Chun Hong, Chen‐Yu Yang, Hsin‐Han Lee, Guan‐Long Chen, Ching Shih, Yu‐Chen Hsin, Chiao‐Yun Lo, Sin‐You Huang, Cheng‐Yi Shih, Shan‐Yi Yang, I‐Jung Wang, Yao‐Jen Chang, Shih‐Ching Chiu, Yi‐Hui Su, Chih‐Yao Wang, Kuan‐Ming Chen, Ho‐Lin Tsai, Jeng‐Hua Wei, Shyh‐Shyuan Sheu, Wei‐Chung Lo, Shih‐Chieh Chang, Tuo‐Hung Hou   +21 more
wiley   +1 more source

Self‐Powered Neuromorphic Touch Sensors Based on Triboelectric Devices: Current Approaches and Open Challenges

Small, Volume 22, Issue 16, 17 March 2026.
This review outlines how triboelectric self‐powered tactile sensors can be integrated with neuromorphic devices to emulate human touch. It summarizes current coupling strategies, operational modes, and synaptic functions enabled by triboelectric nanogerator (TENG)‐based systems, while highlighting key mechanisms, performance considerations, and future ...
Fabrizio Torricelli, Giuseppina Pace
wiley   +1 more source

Low-Rank Compensation in Hybrid 3D-RRAM/SRAM Computing-in-Memory System for Edge Computing

Eng
Artificial intelligence (AI) has made significant strides, with computing-in-memory (CIM) emerging as a key enabler for energy-efficient AI acceleration.
Weiye Tang, Long Nie, Cailian Ma, Hao Wu, Yiyang Yuan, Shuaidi Zhang, Qihao Liu, Feng Zhang   +7 more
doaj   +1 more source

Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO₂/Ti RRAM Device via Post Annealing Process

Inorganics
As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important.
Yuseong Jang, Chanmin Hwang, Sanggyu Bang, Hee-Dong Kim   +3 more
doaj   +1 more source

Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations

Nanomaterials
Neuromorphic computing has emerged as an alternative computing paradigm to address the increasing computing needs for data-intensive applications. In this context, resistive random access memory (RRAM) devices have garnered immense interest among the ...
Kannan Udaya Mohanan
doaj   +1 more source

High-density via RRAM cell with multi-level setting by current compliance circuits

Discover Nano
In this work, multi-level storage in the via RRAM has been first time reported and demonstrated with the standard FinFET CMOS logic process. Multi-level states in via RRAM are achieved by controlling the current compliance during set operations.
Yu-Cheng Hsieh, Yu-Cheng Lin, Yao-Hung Huang, Yu-Der Chih, Jonathan Chang, Chrong-Jung Lin, Ya-Chin King   +6 more
doaj   +1 more source

Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

International Journal of Extreme Manufacturing
Embedded memory, which heavily relies on the manufacturing process, has been widely adopted in various industrial applications. As the field of embedded memory continues to evolve, innovative strategies are emerging to enhance performance.
Zijian Wang, Yixian Song, Guobin Zhang, Qi Luo, Kai Xu, Dawei Gao, Bin Yu, Desmond Loke, Shuai Zhong, Yishu Zhang   +9 more
doaj   +1 more source

Optimizing TiO₂/HfO₂ Multilayer RRAM for Self-Rectifying Characteristics. [PDF]

Micromachines (Basel)
Nam CH, Baek MH.
europepmc   +1 more source

Agar-Based Resistive Switching Memory for Neuromorphic Applications. [PDF]

ACS Omega
Chen HC, Kao IC, Lai KJ, Chen CY, Chang YC.   +4 more
europepmc   +1 more source