Compute-in-memory implementation of state space models for event sequence processing. [PDF]
Zhang X +6 more
europepmc +1 more source
Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory Devices. [PDF]
Chen KH +5 more
europepmc +1 more source
Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]
Xiao A +9 more
europepmc +1 more source
A Reconfigurable Memristor-Based Computing-in-Memory Circuit for Content-Addressable Memory in Sensor Systems. [PDF]
Hu H +12 more
europepmc +1 more source
Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers. [PDF]
Liu K +9 more
europepmc +1 more source
Nickel-Assisted Laser Oxidation of WSe<sub>2</sub> Layered Films for Spatially Controlled WO<sub>3</sub> Patterning Process toward Resistive Memory and Molecular Sensing. [PDF]
Hsu YC +7 more
europepmc +1 more source
Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing. [PDF]
Ielmini D, Pedretti G.
europepmc +1 more source
The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]
Jeżak P +3 more
europepmc +1 more source
Polarity-Controlled Volatile HfO<sub>2</sub> Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing. [PDF]
Jang Y, Hwang C, Chae M, Kim T, Kim HD.
europepmc +1 more source
Tunable Hydrogen Dynamics Under Electrical Bias for Neuromorphic Memory Applications. [PDF]
Noh HY +6 more
europepmc +1 more source

