Results 151 to 160 of about 13,298 (199)

Scanning Thermal Microscopy Method for Self-Heating in Nonlinear Devices and Application to Filamentary Resistive Random-Access Memory. [PDF]

ACS Nano
Harnack N, Rodehutskors S, Gotsmann B.
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A flexible and fast digital twin for RRAM systems applied for training resilient neural networks. [PDF]

Sci Rep
Fritscher M, Singh S, Rizzi T, Baroni A, Reiser D, Mallah M, Hartmann D, Bende A, Kempen T, Uhlmann M, Kahmen G, Fey D, Rana V, Menzel S, Reichenbach M, Krstic M, Merchant F, Wenger C.   +17 more
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Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoO₃ Nanofibers for Future Resistive Random-Access Memory Applications. [PDF]

Molecules
Hu Q, Luo H, Song C, Wang Y, Yue B, Liu J.   +5 more
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An overview of critical applications of resistive random access memory. [PDF]

Nanoscale Adv
Zahoor F, Nisar A, Bature UI, Abbas H, Bashir F, Chattopadhyay A, Kaushik BK, Alzahrani A, Hussin FA.   +8 more
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Memristor-based feature learning for pattern classification. [PDF]

Nat Commun
Shi T, Gao L, Tian Y, Tang S, Liu J, Li Y, Zhou R, Cui S, Zhang H, Li Y, Wu Z, Zhang X, Li T, Yan X, Liu Q.   +14 more
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Enhancing Stability and Performance of Conductive Bridge Random Access Memory: Use of a Copper-Doped ZnO Nanorod-Embedded Switching Layer. [PDF]

ACS Appl Mater Interfaces
Liu PT, Chiu YC, Hsu CC, Gan KJ, Ruan DB, Su SJ, Chang SW.   +6 more
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Overcoming Volatility in Ion Gel via Ag Doping for Nonvolatile Memristive Switching. [PDF]

ACS Omega
Nam J, Jeong J, Lee S, Kim Y, Jeon W.
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RRAM Refresh Circuit

Proceedings of the 26th edition on Great Lakes Symposium on VLSI, 2016
RRAM-based memory is a promising emerging technology for both on-chip and stand-alone non-volatile data storage in advanced technologies. In addition to its small dimensions, the RRAM device has many technological advantages including its low-programming voltages, high speed, low power, CMOS-compatible fabrication process, and potentially monolithic 3D
Amr M.S. Tosson, Mohab Anis, Lan Wei
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RRAM switching mechanism

Symposium Non-Volatile Memory Technology 2005., 2006
The property of PCMO RRAM memory resistors have been studied in terms of electrical pulse width, temperature dependent of resistance, trap state, and electrode effects. The PCMO material is deposited using MOD, PVD, or PLD process. The MOD PCMO is a small grain polycrystal material.
S.T. Hsu, W.W. Zhuang, T.K. Li, W. Pan, A. Ignatiev, C. Papagianni, N.J. Wu   +6 more
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Metal–Oxide RRAM

Proceedings of the IEEE, 2012
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application.
H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu, Yu-Sheng Chen, Yi Wu, Pang-Shiu Chen, Byoungil Lee, Frederick T. Chen, Ming-Jinn Tsai   +8 more
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