Polarity-Controlled Volatile HfO<sub>2</sub> Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir Computing. [PDF]
Jang Y, Hwang C, Chae M, Kim T, Kim HD.
europepmc +1 more source
AC stress and electronic effects on SET switching of HfO2 RRAM
Jen-Chieh Liu +5 more
openalex +2 more sources
Impact of Reset Pulse Width on Gradual Conductance Programming in Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>-Based RRAM. [PDF]
Lim H, Shim W, Kim TH.
europepmc +1 more source
Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. [PDF]
Wang YC +6 more
europepmc +1 more source
Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory Devices. [PDF]
Chen KH, Kao MC, Chen HC, Wang YC.
europepmc +1 more source
Optoelectronic array of photodiodes integrated with RRAMs for energy-efficient in-sensor computing. [PDF]
Pan W +11 more
europepmc +1 more source
High Speed Unipolar Switching with Very Low Reset Current Resistance RAM (RRAM) for Non-Volatile Memory Application [PDF]
Seung‐Eon Ahn +6 more
openalex +1 more source
Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena. [PDF]
Kim H, Kim S, Cho JY, Lee SH, Kim MH.
europepmc +1 more source
Fully Hardware Memristive Neuromorphic Computing Enabled by the Integration of Trainable Dendritic Neurons and High‐Density RRAM Chip [PDF]
Zhen Yang +18 more
openalex +1 more source

