Results 11 to 20 of about 16,611 (244)
Design of the RRAM-Based Polymorphic Look-Up Table Scheme [PDF]
IEEE Journal of the Electron Devices Society, 2019 The polymorphic gates are the circuit cells that deliver different functions with the different external input, supply voltage or temperature. It is an effective method to resist the reverse engineering attacks, for the attackers cannot distinguish the ...
Xiaole Cui +3 more
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The Synthesis Method of Logic Circuits Based on the NMOS-Like RRAM Gates
IEEE Access, 2021 The synthesis method of logic circuits based on the RRAM (Resistive Random Access Memory) devices is of great concern in recent years. Inspired by the CMOS-like RRAM based logic gates, this work proposes a NMOS-like RRAM gate family.
Xiaole Cui, Ye Ma, Feng Wei, Xiaoxin Cui
doaj +1 more source
Effect of Hydrogen Annealing on Performances of BN-Based RRAM
Nanomaterials, 2023 BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high ...
Doowon Lee, Hee-Dong Kim
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IEEE Journal of the Electron Devices Society, 2021 Resistive switching random access memory (RRAM) shows its potential to be a promising candidate as the basic in-memory computing unit for deep neural networks (DNN) accelerator design due to its non-volatile, low power, and small footprint properties ...
Chenglong Huang +5 more
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Investigation of key performance metrics in TiO<sub>X</sub>/TiN based resistive random-access memory cells. [PDF]
Sci RepResistive random-access memory (RRAM) is a promising beyond-CMOS technology due to its non-volatility, scalability, and high ON/OFF ratio. Furthermore, a single RRAM cell can operate as an analog resistor, meaning that it can be used in more novel ...
Zink BR +4 more
europepmc +2 more sources
Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing
Nanomaterials, 2020 A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the ...
Lei Wu +3 more
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Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
APL Materials, 2022 This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices.
Minjae Kim +5 more
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Journal of Asian Ceramic Societies, 2020 Amorphous LaGdO3 (LGO) thin films were deposited by using RF sputtering system and unipolar resistive switching (URS) properties in the Al/LGO/ITO structure were investigated.
Chia-Shan Chien +2 more
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Impact of laser attacks on the switching behavior of RRAM devices [PDF]
, 2020 The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory ...
Arumi Delgado, Daniel +7 more
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Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature
Advanced Electronic Materials, 2023 The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture.
Jun Lan +15 more
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