Results 11 to 20 of about 13,298 (199)

Impact of laser attacks on the switching behavior of RRAM devices [PDF]

, 2020
The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory ...
Arumi Delgado, Daniel, Bargalló González, Mireia, Campabadal, Francesca, Gómez Pau, Álvaro, Hernández, David, Manich Bou, Salvador, Montilla, Víctor, Rodríguez Montañés, Rosa   +7 more
core   +2 more sources

Electrical properties and current conduction mechanisms of LaGdO3 thin film by RF sputtering for RRAM applications

Journal of Asian Ceramic Societies, 2020
Amorphous LaGdO3 (LGO) thin films were deposited by using RF sputtering system and unipolar resistive switching (URS) properties in the Al/LGO/ITO structure were investigated.
Chia-Shan Chien, Meng-Hung Tsai, Cheng-Liang Huang   +2 more
doaj   +1 more source

Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Advanced Electronic Materials, 2023
The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture.
Jun Lan, Zhixiong Li, Zhenjie Chen, Quanzhou Zhu, Wenhui Wang, Muhammad Zaheer, Jiqing Lu, Jinxuan Liang, Mei Shen, Peng Chen, Kai Chen, Guobiao Zhang, Zhongrui Wang, Feichi Zhou, Longyang Lin, Yida Li   +15 more
doaj   +1 more source

Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

Micromachines, 2021
Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications.
Donglin Zhang, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han, Honghu Yang, Jinhui Cheng, Qingting Ding, Haijun Jiang, Jianguo Yang, Hangbing Lv   +12 more
doaj   +1 more source

A Fully Integrated Reprogrammable CMOS-RRAM Compute-in-Memory Coprocessor for Neuromorphic Applications

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Analog compute-in-memory with resistive random access memory (RRAM) devices promises to overcome the data movement bottleneck in data-intensive artificial intelligence (AI) and machine learning.
Justin M. Correll, Vishishtha Bothra, Fuxi Cai, Yong Lim, Seung Hwan Lee, Seungjong Lee, Wei D. Lu, Zhengya Zhang, Michael P. Flynn   +8 more
doaj   +1 more source

A novel read circuit for RRAM based on RC delay effect

Electronics Letters, 2023
In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit.
Jiabao Ye, Xuecheng Cui, Haoxiong Bi, Jifang Cao, Wannian Wang, Xiaoxin Xu, Dong Liu, Bing Chen   +7 more
doaj   +1 more source

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory [PDF]

, 2015
Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps.
Byun, Kwangsub, Chang, Yao-Feng, Fowler, Burt, Lee, Jack C., Zhou, Fei   +4 more
core   +1 more source

A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF

Transactions on Cryptographic Hardware and Embedded Systems, 2018
The reconfigurable physically unclonable function (PUF) is an advanced security hardware primitive, suitable for applications requiring key renewal or similar refresh functions.
Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede   +5 more
doaj   +1 more source

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]

, 2014
An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng, Chen, Yen-Ting, Fowler, Burt W., Lee, Jack C., Wang, Yanzhen, Xue, Fei, Zhou, Fei   +6 more
core   +1 more source

RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Nanoscale Research Letters, 2019
In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen, Chrong Jung Lin, Ya-Chin King   +2 more
doaj   +1 more source