Results 21 to 30 of about 16,611 (244)

A Fully Integrated Reprogrammable CMOS-RRAM Compute-in-Memory Coprocessor for Neuromorphic Applications

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Analog compute-in-memory with resistive random access memory (RRAM) devices promises to overcome the data movement bottleneck in data-intensive artificial intelligence (AI) and machine learning.
Justin M. Correll, Vishishtha Bothra, Fuxi Cai, Yong Lim, Seung Hwan Lee, Seungjong Lee, Wei D. Lu, Zhengya Zhang, Michael P. Flynn   +8 more
doaj   +1 more source

A novel read circuit for RRAM based on RC delay effect

Electronics Letters, 2023
In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit.
Jiabao Ye, Xuecheng Cui, Haoxiong Bi, Jifang Cao, Wannian Wang, Xiaoxin Xu, Dong Liu, Bing Chen   +7 more
doaj   +1 more source

Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

Micromachines, 2021
Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications.
Donglin Zhang, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han, Honghu Yang, Jinhui Cheng, Qingting Ding, Haijun Jiang, Jianguo Yang, Hangbing Lv   +12 more
doaj   +1 more source

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory [PDF]

, 2015
Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps.
Byun, Kwangsub, Chang, Yao-Feng, Fowler, Burt, Lee, Jack C., Zhou, Fei   +4 more
core   +1 more source

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]

, 2014
An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng, Chen, Yen-Ting, Fowler, Burt W., Lee, Jack C., Wang, Yanzhen, Xue, Fei, Zhou, Fei   +6 more
core   +1 more source

A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF

Transactions on Cryptographic Hardware and Embedded Systems, 2018
The reconfigurable physically unclonable function (PUF) is an advanced security hardware primitive, suitable for applications requiring key renewal or similar refresh functions.
Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede   +5 more
doaj   +1 more source

RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Nanoscale Research Letters, 2019
In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress.
Chih Yuan Chen, Chrong Jung Lin, Ya-Chin King   +2 more
doaj   +1 more source

Spiking Neural Networks for Inference and Learning: A Memristor-based Design Perspective [PDF]

, 2019
On metrics of density and power efficiency, neuromorphic technologies have the potential to surpass mainstream computing technologies in tasks where real-time functionality, adaptability, and autonomy are essential.
Abbott, Bartolozzi, Bartolozzi, Benjamin, Bi, Bohte, Detorakis, Faisal, Fouda, Fouda, Furber, Gerstner, Gerstner, Goldberg, Gütig, Hinton, Hopfield, Huayaney, Hyvärinen, Ielmini, Indiveri, Isomura, Jolivet, Katz, Kim, Levy, Li, Lillicrap, Maass, Mead, Merolla, Moreno-Bote, Naous, Neftci, Neftci, Neftci, Paille, Park, Pfister, Prezioso, Puglisi, Qiao, Querlioz, Savin, Saïghi, Schultz, Shouval, Tiago, Urbanczik, Wan, Wang, Williams, Woo, Xie, Yarom, Yu, Yu   +56 more
core   +2 more sources

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

IEEE Access, 2021
Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku, Mohd Haris Bin Md Khir, I. Md Nawi, M. A. Zakariya, Furqan Zahoor   +4 more
doaj   +1 more source

Advanced physical modeling of SiOx resistive random access memories [PDF]

, 2016
We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (
Asenov, Asen, Buckwell, Mark, Gao, David, Kenyon, Anthony, Mehonic, Adnan, Montesi, Luca, Sadi, Toufik, Shluger, Alexander, Wang, Liping   +8 more
core   +1 more source