Results 31 to 40 of about 13,298 (199)

Glucose-based resistive random access memory for transient electronics

open access: yesJournal of Information Display, 2019
In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park   +3 more
doaj   +1 more source

Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

open access: yesMaterials Research Express, 2022
We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park   +4 more
doaj   +1 more source

The Frontiers of Deep Reinforcement Learning for Resource Management in Future Wireless HetNets: Techniques, Challenges, and Research Directions

open access: yesIEEE Open Journal of the Communications Society, 2022
Next generation wireless networks are expected to be extremely complex due to their massive heterogeneity in terms of the types of network architectures they incorporate, the types and numbers of smart IoT devices they serve, and the types of emerging ...
Abdulmalik Alwarafy   +4 more
doaj   +1 more source

A RRAM-Based True Random Number Generator with 2T1R Architecture for Hardware Security Applications

open access: yesMicromachines, 2023
Resistance random access memory (RRAM) based true random number generator (TRNG) has great potential to be applied to hardware security owing to its intrinsic switching variability. Especially the high resistance state (HRS) variation is usually taken as
Bo Peng   +3 more
doaj   +1 more source

Design of the RRAM-Based Polymorphic Look-Up Table Scheme

open access: yesIEEE Journal of the Electron Devices Society, 2019
The polymorphic gates are the circuit cells that deliver different functions with the different external input, supply voltage or temperature. It is an effective method to resist the reverse engineering attacks, for the attackers cannot distinguish the ...
Xiaole Cui   +3 more
doaj   +1 more source

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

open access: yesNanoscale Research Letters, 2020
In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor   +2 more
doaj   +1 more source

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells [PDF]

open access: yes, 2011
In this letter, we explore the influence of the Cu(x)Te(1-x) layer composition (0.2 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties.
Aratani K.   +10 more
core   +1 more source

Graphene-based RRAM devices for neural computing

open access: yesFrontiers in Neuroscience, 2023
Resistive random access memory is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to build highly accurate crossbar arrays.
Rajalekshmi T. R   +3 more
openaire   +4 more sources

Accurate Inference With Inaccurate RRAM Devices: A Joint Algorithm-Design Solution

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Resistive random access memory (RRAM) is a promising technology for energy-efficient neuromorphic accelerators. However, when a pretrained deep neural network (DNN) model is programmed to an RRAM array for inference, the model suffers from accuracy ...
Gouranga Charan   +5 more
doaj   +1 more source

First evidence of resistive switching in polycrystalline GaV4S8 thin layers [PDF]

open access: yes, 2011
Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se).
Beck   +19 more
core   +3 more sources

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