Results 51 to 60 of about 13,298 (199)

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Nanomaterials, 2020
Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are ...
Zongjie Shen, Chun Zhao, Yanfei Qi, Wangying Xu, Yina Liu, Ivona Z. Mitrovic, Li Yang, Cezhou Zhao   +7 more
doaj   +1 more source

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

, 2015
Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task.
Guo, Zhonglu, Sun, Zhimei, Zhou, Jian, Zhu, Linggang   +3 more
core   +1 more source

Self-consistent physical modeling of SiOx-based RRAM structures [PDF]

, 2015
We apply a unique three-dimensional (3D) physics-based atomistic simulator to study silicon-rich (SiOx, x<;2) resistive switching nonvolatile memory (RRAM) devices.
Asenov, Asen, Georgiev, Vihar, Gerrer, Louis, Sadi, Toufik, Wang, Liping   +4 more
core   +1 more source

Tunable Switching Mechanisms in HfZrO2‐Based Tunnel Junctions for High‐Performance Synaptic Arrays

Advanced Science, EarlyView.
This work demonstrates hybrid switching in engineered HZO‐based FTJs, enabled by controlled interlayer design and oxygen scavenging dynamics. The combined switching mechanism produces robust multilevel conductance states in large crossbar arrays, offering a materials‐driven pathway toward scalable in‐memory computing with enhanced tunability and ...
Jiwon You, Jeong‐Han Kim, Minsuk Song, Been Kwak, Eun Chan Park, Manh‐Cuong Nguyen, Wonjun Shin, Jangsaeng Kim, Daewoong Kwon   +8 more
wiley   +1 more source

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices [PDF]

Журнал нано- та електронної фізики, 2016
In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
T.D. Dongale, K.V. Khot, S.V. Mohite, S.S. Khandagale, S.S. Shinde, V.L. Patil, S.A. Vanalkar, A.V. Moholkar, K.Y. Rajpure, P.N. Bhosale, P.S. Patil, P.K. Gaikwad, R.K. Kamat   +12 more
doaj   +1 more source

Borophene: Crucial Challenges and the Way Forward

Advanced Science, EarlyView.
This review explores the challenges and progress in borophene research, focusing on synthesis strategies, structural properties, and potential applications. It highlights key experimental breakthroughs, discusses theoretical insights into borophene's unique features, and addresses pathways for overcoming stability and scalability issues.
Zhixuan Li, Jeyaraman Sankar, Prashant Kumar, Ajayan Vinu   +3 more
wiley   +1 more source

Sol–Gel-Processed Y₂O₃ Multilevel Resistive Random-Access Memory Cells for Neural Networks

Nanomaterials, 2023
Yttrium oxide (Y2O3) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage forming ...
Taehun Lee, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, Jaewon Jang   +9 more
doaj   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization‐ and Defect‐Mediated Switching in Hafnia Ferroelectrics

Advanced Science, EarlyView.
Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo, Jiseong Im, Joon Hwang, Sung‐Ho Park, Jonghyun Ko, Kangwook Choi, Sangwoo Ryu, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses

, 2013
Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
core   +1 more source

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source