Results 51 to 60 of about 16,611 (244)

Accurate Inference With Inaccurate RRAM Devices: A Joint Algorithm-Design Solution

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Resistive random access memory (RRAM) is a promising technology for energy-efficient neuromorphic accelerators. However, when a pretrained deep neural network (DNN) model is programmed to an RRAM array for inference, the model suffers from accuracy ...
Gouranga Charan, Abinash Mohanty, Xiaocong Du, Gokul Krishnan, Rajiv V. Joshi, Yu Cao   +5 more
doaj   +1 more source

An RRAM retention prediction framework using a convolutional neural network based on relaxation behavior

Neuromorphic Computing and Engineering, 2023
The long-time retention issue of resistive random access memory (RRAM) brings a great challenge in the performance maintenance of large-scale RRAM-based computation-in-memory (CIM) systems.
Yibei Zhang, Qingtian Zhang, Qi Qin, Wenbin Zhang, Yue Xi, Zhixing Jiang, Jianshi Tang, Bin Gao, He Qian, Huaqiang Wu   +9 more
doaj   +1 more source

Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory

, 2015
Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task.
Guo, Zhonglu, Sun, Zhimei, Zhou, Jian, Zhu, Linggang   +3 more
core   +1 more source

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO₃/Al/SrZrTiO₃/ITO with Embedded Al Layer

Nanomaterials, 2022
The SrZrTiO3 (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics.
Ke-Jing Lee, Wei-Shao Lin, Li-Wen Wang, Hsin-Ni Lin, Yeong-Her Wang   +4 more
doaj   +1 more source

Self-consistent physical modeling of SiOx-based RRAM structures [PDF]

, 2015
We apply a unique three-dimensional (3D) physics-based atomistic simulator to study silicon-rich (SiOx, x<;2) resistive switching nonvolatile memory (RRAM) devices.
Asenov, Asen, Georgiev, Vihar, Gerrer, Louis, Sadi, Toufik, Wang, Liping   +4 more
core   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

Advanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun, Sanchali Mitra, Hongxi Su, Jiali Huo, Haofei Zheng, Michel Bosman, Yee Sin Ang, Kah‐Wee Ang   +7 more
wiley   +1 more source

A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Nanoscale Research Letters, 2018
Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, the ...
Yun-Feng Kao, Wei Cheng Zhuang, Chrong-Jung Lin, Ya-Chin King   +3 more
doaj   +1 more source

Vertical Self‐Rectifying Memristive Arrays for Page‐Wise Parallel Logic and Arithmetic Processing

Advanced Materials, EarlyView.
This study proposes a page‐wise logic‐in‐memory architecture realized in a 3D vertical resistvie random‐access memory array of self‐rectifying memristors. By introducing intra‐ and inter‐page logic primitives, the system enables Boolean and arithmetic operations to be executed directly within the memory.
Kunhee Son, Jea Min Cho, Dong Hoon Shin, Yeong Rok Kim, Néstor Ghenzi, Sunwoo Cheong, Byeong Su Kim, Jung Kyu Lee, Sungho Kim, Wonho Choi, Soo Hyung Lee, Janguk Han, Cheol Seong Hwang   +12 more
wiley   +1 more source

Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices [PDF]

Журнал нано- та електронної фізики, 2016
In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis.
T.D. Dongale, K.V. Khot, S.V. Mohite, S.S. Khandagale, S.S. Shinde, V.L. Patil, S.A. Vanalkar, A.V. Moholkar, K.Y. Rajpure, P.N. Bhosale, P.S. Patil, P.K. Gaikwad, R.K. Kamat   +12 more
doaj   +1 more source