Results 141 to 150 of about 51,456 (290)

Energy‐Resolved Femtosecond Dynamics of Plasmon‐Induced Hole Injection at Au/GaN Heterointerfaces

Advanced Science, EarlyView.
We reveal the spectral signature of ultrafast nonthermal hot‐hole transfer at plasmonic heterointerfaces, which reshapes hot‐carrier relaxation dynamics and significantly enhances hydrogen evolution, providing a mechanistic basis for optimizing hot‐carrier utilization in photocatalysis.
Yuying Gao, Yuxin Xie, Jonathan Diederich, Christian Höhn, Klaus Schwarzburg, Fengtao Fan, Can Li, Roel van de Krol, Dennis Friedrich   +8 more
wiley   +1 more source

Machine learning models for efficient characterization of Schottky barrier photodiode internal parameters. [PDF]

Sci Rep, 2023
Ocaya RO, Akinyelu AA, Al-Sehemi AG, Dere A, Al-Ghamdi AA, Yakuphanoğlu F.   +5 more
europepmc   +1 more source

Diamond Schottky barrier diodes

, 2010
Research on wide band gap semiconductors suitable for power electronic devices has spread rapidly in the last decade. The remarkable results exhibited by silicon carbide (SiC) Schottky batTier diodes (SBDs), commercially available since 2001, showed the potential of wide band gap semiconductors for replacing silicon (Si) in the range of medium to high ...
openaire   +1 more source

PEC‐DFM Hybrid‐Sensor Based on Nanoparticle‐Resolved Estimation for Sensitive and Reversible Glucose Monitoring

Advanced Science, EarlyView.
Abstract The accurate detection of glucose in wound exudate is critically important for monitoring chronic wound healing. While photoelectrochemical (PEC) sensors are widely used, they often suffer from material degradation caused by redox reactions during operation. Herein, we introduce a dark‐field microscopy (DFM) setup integrated with a PEC system,
Zihao Zhang, Junzheng Liu, Qinggong Wu, Yuan Zeng, Gang Xiao, Zhao Yue, Zhigang Zang, Shuang Zhao   +7 more
wiley   +1 more source

Asymmetric Schottky Barrier in Rubrene Transistor via Monolayer Graphene Insertion toward Self-Powered Imaging. [PDF]

Materials (Basel), 2023
Liu Q, Zheng X, Li M, Du Q, Zhu C, Wang W, Qin S.   +6 more
europepmc   +1 more source

Fabrication of High‐Density Multimodal Neural Probes Based on Heterogeneously Integrated CMOS

Advanced Science, EarlyView.
A chiplet‐based methodology democratizes active neural probe development on standard bulk CMOS services. This yields the first probe combining high‐density electrophysiology (416 electrodes) with calcium imaging (832 photodiodes) and complete on‐chip signal processing across 13 shanks.
Ju Hee Mun, Miji Kim, Wooyeon Shin, Yongjun Park, Kanghwan Kim, Il‐Joo Cho, Jae Won Shim, Min Soo Kim, Sunwoo Lee, Jeongjin Kim, Changhyuk Lee   +10 more
wiley   +1 more source

Electrical Contacts to MoS₂ with Covellite (CuS): The Contact Type and Schottky Barrier Modulation. [PDF]

ACS Omega
Huai MJ, Gao YM, Zhang YJ, Wang NW, Wang JL, Shi XQ.   +5 more
europepmc   +1 more source

Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor. [PDF]

Micromachines (Basel), 2023
Esakki P, Kumar P, Esakki M, Venkatesh A.   +3 more
europepmc   +1 more source

Modulating Persistent Photoconductivity through Barrier Engineering for High‐performance and Multifunctional Two‐dimensional Optoelectronic Devices

Advanced Science, EarlyView.
Schottky barrier engineering using van der Waals contacts enables effective modulation of persistent photoconductivity (PPC) in optoelectronic devices. A high persistent photoconductivity gain (PPCG) (307.6%) is achieved in a high‐barrier Au/MoS2 junction, supporting photomemory and optoelectronic synaptic behaviors. A low PPCG (4.72%) is achieved in a
Panpan Huo, Xinhao Zhang, Xiangyong Cui, Yeming Wang, Dong Zhou, Baoyuan Man, Il Jeon, Won Jong Yoo, Cheng Yang   +8 more
wiley   +1 more source

Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide. [PDF]

Nat Commun
Liu M, Niu J, Yang G, Zhao R, Chen K, Lu W, Liao F, Wu Z, Jiang C, Geng D, Lu N, Nathan A, Li L, Liu M.   +13 more
europepmc   +1 more source