Results 161 to 170 of about 51,456 (290)
Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities. [PDF]
Milazzo S +4 more
europepmc +1 more source
Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode. [PDF]
Choi D, Jeon J, Park TE, Ju BK, Lee KY.
europepmc +1 more source
In this study, FeCoNiCuPt high‐entropy alloy particles (HEA) are loaded onto protonated g‐C3N4 nanosheets (HCN NSs) to construct HEA/HCN composites through an electrostatic self‐assembly method. Protonation treatment enriches the surface of g‐C3N4 nanosheets with abundant active sites and enhances their interfacial charge separation capability ...
Yunzhu Zang +3 more
wiley +1 more source
Advances in Interfacial Engineering and Structural Optimization for Diamond Schottky Barrier Diodes. [PDF]
Lu S +7 more
europepmc +1 more source
Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD. [PDF]
Jiao T +8 more
europepmc +1 more source
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal +3 more
wiley +1 more source
Au-Si Diffusion Effects on Surface Plasmon Resonance Sensor Using Internal Photoemission at Metal/Si Schottky Barrier. [PDF]
Ukaji M, Abubakr E, Imai Y, Kan T.
europepmc +1 more source
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen +6 more
wiley +1 more source
Scalable transition metal dichalcogenide memtransistor arrays with Schottky-barrier control for energy-efficient artificial neural networks. [PDF]
Hou X +11 more
europepmc +1 more source
Electrides offer unique opportunities as catalyst supports for hydrogen evolution reactions. This study presents an electride‐supported Ru/Nd2ScSi2 catalyst exhibiting outstanding hydrogen evolution reaction performance and excellent stability. Anionic Ru species on the electride surface facilitate water dissociation and optimize hydrogen adsorption ...
Zhiqi Wang +5 more
wiley +1 more source

