Development and Modelling of Gallium Nitride Based Lateral Schottky Barrier Diodes with Anode Recesses for mmWave and THz Applications. [PDF]
Micromachines (Basel), 2022 Alathbah M.
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Advanced Electronic Materials, EarlyView.A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin +10 more
wiley +1 more source
A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor. [PDF]
PLoS One, 2023 Liu X, Li M, Wu M, Zhang S, Jin X.
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Advanced Electronic Materials, EarlyView.Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis +13 more
wiley +1 more source
A new <i>in situ</i> method for modifying the Schottky barrier height at buried metal-organic semiconductor interfaces. [PDF]
Natl Sci RevSirringhaus H.
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Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors
Advanced Electronic Materials, EarlyView.We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang +6 more
wiley +1 more source
Long short-term memory (LSTM) networks for precision prediction of Schottky barrier photodiode behavior at different ıllumination levels. [PDF]
Sci RepTulum G +4 more
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Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
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Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. [PDF]
Nanomaterials (Basel)Wang P +10 more
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Advanced Electronic Materials, EarlyView.A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
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