Results 11 to 20 of about 51,456 (290)
Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer [PDF]
, 2015 Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high ...
Brocks, Geert, Farmanbar, Mojtaba
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IEEE Journal of the Electron Devices Society, 2020 In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET).
Xi Liu +5 more
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AIP Advances, 2022 Carbon nanotubes (CNTs) are promising materials for gas sensing because of their large specific area and high sensitivity to charge differentiation.
Shota Nakahara +5 more
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Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications
Crystals, 2020 This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on ...
Hung-Jin Teng +5 more
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Spin polarization control through resonant states in an Fe/GaAs Schottky barrier [PDF]
, 2008 Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons ...
A. Hirohata +9 more
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Schottky-barrier coupled Schottky-barrier gate GaAs FET logic
Electronics Letters, 1981 First accounts of the experimental details of Schottky-barrier gate GaAs FET logic circuits that use a Schottky barrier for interstage level shifting are described. Tpd and power consumption of an inverter in an 11-stage ring oscillator showed 120 ps and 12 mW, respectively, with FET gate dimensions of 3×50 μm2.
N. Hashizume, H. Yamada, K. Tomizawa
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An atomistic view on the Schottky barrier lowering applied to SrTiO3/Pt contacts
AIP Advances, 2019 The interface between a metal and a semiconductor is known as Schottky contact and a key factor in semiconductor technologies. Those interfaces normally build an energetic barrier, which is responsible for the exponential current voltage dependence ...
C. Funck, S. Menzel
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AIP Advances, 2022 Under the irradiation of a 63Ni source, the Al/diamond Schottky barrier diode and 2198 Al–Li alloy/diamond Schottky barrier diode can convert decay energy into electrical energy.
Yu Wang +7 more
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +2 more
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Nanophotonics, 2021 MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface.
Yang Changming +6 more
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