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Current transport mechanisms of Schottky barrier and modified Schottky barrier MOSFETs
ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007Current transport mechanisms of Schottky barrier (SB) and modified Schottky barrier (MSB) MOSFETs are investigated by measuring the temperature effect on current-voltage characteristics. For SB MOSFETs, current transport could be dominated by thermionic emission or tunneling mechanism depends on the Schottky barrier height and the gate voltage.
null Bing-Yue Tsui, null Chi-Pei Lu
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1984
In general, the detectors used for detecting electromagnetic radiation fall into one of two categories: (1) classical or thermal detectors and (2) quantum or photon detectors.
S. C. Gupta, H. Preier
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In general, the detectors used for detecting electromagnetic radiation fall into one of two categories: (1) classical or thermal detectors and (2) quantum or photon detectors.
S. C. Gupta, H. Preier
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Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
Materials Science Forum, 2008The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated in the presence of a thermally grown oxide layer on the exposed active area. Gain photocurrent is observed and correlated with the presence of the oxide and with the charge traps at the semiconductor/oxide interface.
Sciuto Antonella +3 more
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1998
A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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Theoretical models of Schottky barriers
Thin Solid Films, 1981ABSTRACTA review is presented in which existing theories of the formation of Schottky barriers are analyzed. The list includes macroscopic dielectric approaches and various microscopic quantum mechanical treatments. The central role of interface states and their different physical origins are assessed. Simple concepts, able to predict general trends in
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IETE Journal of Research, 1972
Schottky barriers have been made by evaporation of indium at a pressure of 1 × 10−6 torr onto chemically prepared n-GaAs. Ohmic contacts to the samples have been made by alloying In-Au composition (90:10 by wt) at a temperature of 550°C for 30 sec. Barrier height has been determined by using (i) C-V method, (ii) photoelectric method, and (iii) forward ...
V. K. Handu, M. S. Tyagi
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Schottky barriers have been made by evaporation of indium at a pressure of 1 × 10−6 torr onto chemically prepared n-GaAs. Ohmic contacts to the samples have been made by alloying In-Au composition (90:10 by wt) at a temperature of 550°C for 30 sec. Barrier height has been determined by using (i) C-V method, (ii) photoelectric method, and (iii) forward ...
V. K. Handu, M. S. Tyagi
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The physics of Schottky barriers
Journal of Physics D: Applied Physics, 1970A review is given of the physical processes which determine the height of the barrier and the current-voltage relationship in a metal-semiconductor Schottky barrier.
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Metal-silicon Schottky barriers
Microelectronics Reliability, 1968Abstract Measurements have been made of the height of Schottky barriers obtained by evaporating metal films on to n-type silicon. In the case of surfaces prepared by chemical methods, the height of the barrier initially depends on the particular method of surface preparation, and subsequently shows a slow change with time, reaching a steady value ...
M.J. Turner, E.H. Rhoderick
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GaN Schottky Barrier Photodetectors
IEEE Sensors Journal, 2010We report the fabrication of GaN photodetectors (PDs) prepared on nanorod template. Using the nanorods template, it was found that we can effectively suppress leakage current, ultraviolet-to-visible rejection ratio and photoconductive gain of the PDs. With -2 V applied bias, it was found that noise equivalent power (NEP) and normalized detectivity (D*)
S. J. Chang +7 more
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Trench Schottky Barrier Controlled Schottky Rectifiers
2009As discussed in the previous chapter, the leakage current for silicon and silicon carbide Schottky rectifiers can be greatly reduced at high reverse bias voltages by shielding the metal contact from the high electric field generated within the semiconductor.
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