Results 21 to 30 of about 51,456 (290)
AIP Advances, 2021 It is generally believed that the resistance degradation behavior of bulk and thin-film oxide capacitors arises from the oxygen vacancy migration within the oxide and/or the charge injection at the oxide/electrode interface.
Feng Xue
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Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study [PDF]
Journal of Nanostructures, 2012 A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism.
Z. Ahangari, M. Fathipour
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Electrical characteristics of Al contact to NiSi using thin W layer as a barrier [PDF]
, 1981 We show that the thermal instability that is observed in Schottky diodes with an Al film on NiSi contact to can be removed by introducing a very thin (~250 Å) tungsten film between the Al and the NiSi layers.
Bartur, M., Nicolet, M-A.
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Efficient Spin Injection into Silicon and the Role of the Schottky Barrier [PDF]
, 2013 Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics.
Dankert, André +2 more
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Nanoscale Research Letters, 2019 We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu +10 more
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IEEE Journal of the Electron Devices SocietyGate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee +3 more
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Investigation of significantly high barrier height in Cu/GaN Schottky diode
AIP Advances, 2016 Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg +4 more
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bertazzi, Francesco +7 more
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GaN Nanowire Schottky Barrier Diodes
IEEE Transactions on Electron Devices, 2017 A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) structures and the principle of dielectric REduced SURface Field (RESURF) is proposed in this paper. High-threading dislocation density in GaN epitaxy grown on foreign substrates has hindered the development and commercialization of vertical GaN power devices.
Gourab Sabui +7 more
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Temperature-dependent electrical characterizations of high-current-density AlN quasi-vertical Schottky barrier diodes on AlN substrates [PDF]
APL Electronic DevicesHigh-current-density (>1 kA/cm2) quasi-vertical AlN Schottky barrier diodes (SBDs) were fabricated on native AlN substrates by metal–organic chemical vapor deposition.
Bingcheng Da +9 more
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