Results 51 to 60 of about 51,456 (290)

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Materials Research Express, 2020
Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
doaj   +1 more source

Suppression of Photo‐Mediated Traps in Integrated Organic Photovoltaic–Photodetector Devices via N‐Type Self‐Assembly‐Driven Interfacial Engineering

Advanced Functional Materials, EarlyView.
Conventional unstable electron transport layers (ETLs) limit self‐powered organic sensors. This work resolves this by developing a n‐type self‐assembled monolayer (SAM), “3‐PAPh”. This SAM forms a chemically stable and structurally ordered interface that fundamentally suppresses defect formation.
Ohhyun Kwon, Jae Hoon Son, Tae Hyuk Kim, Gyeong Min Lee, Seunghyun Oh, Gayoung Ham, Min Jong Lee, Sang Heon Lee, Seon Joong Kim, Hyojung Cha, Han Young Woo, Jae Won Shim   +11 more
wiley   +1 more source

Non-Linear I-V Characteristics of Double Schottky Barriers and Polycrystalline Semiconductors

, 1992
An attempt to determine theoretically the highly non-linear current-voltage (I-V) characteristics of polycrystalline semiconductors, such as ZnO-based varistors, is made from the electrical properties of individual grain boundaries under dc bias.
Bernasconi, Blatter, Blatter, Clerc, E. Canessa, Eda, Eda, Einzinger, Greuter, Kenkel, Kirkpatrick, Levinson, Levinson, Levinson, Mahan, Mahan, Mahan, McLachlan, Niemeyer, Olsson, Olsson, Olsson, Petermann, Pike, Seager, Takayasu, Tao, Tonkoshkur, Tua, V.L. Nguyen, Werner   +30 more
core   +1 more source

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

Advanced Functional Materials, EarlyView.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo, Junsung Byeon, Jungmoon Lim, Sohyeon Park, Sungsan Kang, Byeongchan Kim, Gyuhwi Jeong, Haerim Kim, Bongjun Kim, SeungNam Cha, Sangyeon Pak   +10 more
wiley   +1 more source

Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

AIP Advances, 2013
The Schottky barrier heights of both n and p doped Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes were measured using ballistic electron emission microscopy and ballistic hole emission microscopy (BHEM), respectively.
Robert Balsano, Akitomo Matsubayashi, Vincent P. LaBella   +2 more
doaj   +1 more source

Covalent Organic Frameworks for Photocatalytic CO2 Reduction: Metal Integration Principles, Strategies and Functions

Advanced Functional Materials, EarlyView.
Covalent organic frameworks (COFs) with metals have been recognized as versatile platforms for photocatalytic CO2 reduction (CO2PRR). Herein, an overview of metal integration strategies for COFs is systematically summarized. Regulatory mechanisms and structure–activity relationships between metal integration and COF‐based CO2PRR are emphasized.
Jie He, Minxian Zhang, Jinqiang Zhang, Hongqi Sun, Shaobin Wang, Xiaoguang Duan   +5 more
wiley   +1 more source

Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts

IEEE Journal of the Electron Devices Society, 2017
Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state ...
Max Stelzer, Moritz Jung, Franz Kreupl
doaj   +1 more source

Influence of interface structure on electronic properties and Schottky barriers in Fe/GaAs magnetic junctions

, 2006
The electronic and magnetic properties of Fe/GaAs(001) magnetic junctions are investigated using first-principles density-functional calculations. Abrupt and intermixed interfaces are considered, and the dependence of charge transfer, magnetization ...
Amy Y. Liu, D. O. Demchenko, D. Vanderbilt, P. Vlaic   +3 more
core   +1 more source

Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

Advanced Functional Materials, EarlyView.
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann, Hanglin He, Marko Mladenović, Till Zellweger, Kevin Portner, Klemens Bauer, Guillaume Bellec, Mathieu Luisier, Alexandros Emboras   +8 more
wiley   +1 more source

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

, 2013
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that
Adam T. Neal, Alam K., Baugher B. W. H., Berger H. H., Das S., Du Y., Guo J., Han Liu, Heinze S., Jun Lou, Liu H., Liu H., Liu H., Liu H., Mak K. F., Mengwei Si, Nagashio K., Najmaei S., Neal A. T, Peide D. Ye, Pulickel M. Ajayan, Radisavljevic B., Schroder D. K., Sina Najmaei, Splendiani A., Taur Y., Tung R. T., Wang H., Yexin Deng, Yoon Y., Yuchen Du   +30 more
core   +1 more source