Results 81 to 90 of about 51,456 (290)
Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts
, 2003 We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor.
A.F. Isakovic +19 more
core +1 more source
Single‐ and Dual‐Atom Configurations in Atomically Dispersed Catalysts for Lithium–Sulfur Batteries
Advanced Functional Materials, EarlyView.Single‐atom and dual‐atom‐based atomically dispersed catalysts (ADCs) effectively address the shuttle effect and sluggish redox kinetics in Li–S batteries. With nearly 100% atomic utilization and tunable coordination environments, ADCs enhance LiPSs adsorption, lower conversion barriers, and accelerate sulfur redox reactions.
Haoyang Xu +4 more
wiley +1 more source
, 2018 The transition metal dichalcogenide ($MX_{2}$, where $M$=Mo, W and $X$=S, Se, Te) monolayers are of high interest for semiconducting applications at the nanoscale level; this interest is due to both their direct band gaps and high charge mobilities.
Hoehn, Ross D. +2 more
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Advanced Functional Materials, EarlyView.Self‐assembled monolayers (SAMs) are promising hole‐transporting materials for organic photovoltaics (OPVs), but suffer from self‐aggregation and poor large‐area uniformity. We find that interfacial modification using nicotinic hydrazide can eliminate the residual SAM aggregates by forming energetically favorable complexes, yielding uniform SAM.
Seongwon Yoon +10 more
wiley +1 more source
Electrical Transport Characteristics and Deep Level Transient Spectroscopy of Ni/V/n-InP Schottky Barrier Diodes [PDF]
Журнал нано- та електронної фізики, 2012 We report on the temperature-dependent electrical characteristics and deep level transient spectroscopy (DLTS) of the Ni/V/n-InP Schottky diodes in the temperature range of 180-420 K.
V.Rajagopal Reddy, S.Sankar Naik
doaj
Solar cells having integral collector grids [PDF]
, 1978 A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal ...
Evans, J. C., Jr.
core +1 more source
Advanced Functional Materials, EarlyView.A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee +11 more
wiley +1 more source
Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit
The InnovationInternal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap.
Jintao Fu +6 more
doaj +1 more source
Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
AIP Advances, 2019 The transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode.
Yoshihiro Shimazu +2 more
doaj +1 more source
Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems
Advanced Functional Materials, EarlyView.MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley +1 more source