Results 91 to 100 of about 25,268 (194)

Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drain

IEEE Journal of the Electron Devices Society
The ballistic transport behaviors of SOI nMOSFETs with NiSi metal source/drain (S/D) have been investigated. It is found that the suppression of Schottky barrier height for holes results in an improvement of carrier injection velocity (vinj ...
Rui Su, Yan Jing, Xinyi Zhang, Yi Jiang, Dawei Gao, Walter Schwarzenbach, Bich-Yen Nguyen, Junkang Li, John Robertson, Rui Zhang   +9 more
doaj   +1 more source

Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode [PDF]

Журнал нано- та електронної фізики, 2011
Ag/p-Sn0.2Se0.8 Schottky barrier diodes have been fabricated and characterized by the current-voltage (I-V) technique as a function of temperature in the range of 303 K to 403 K.
K.K. Patel, M. Patel, K.D. Patel, G.K. Solanki, V.M. Pathak, R. Srivastava   +5 more
doaj  

Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range [PDF]

Журнал нано- та електронної фізики, 2011
The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses.
N. Padha, R. Sachdeva, R. Sihotra, S.B. Krupanidhi   +3 more
doaj  

Hot-Carrier Effect and Nanometer Metal Enabling Si-Based Mid-Infrared Detection Beyond 5μm of Wavelength

IEEE Photonics Journal
Detection of photons with energy below the bandgap or Schottky barrier height of silicon has been limited in the past. Here, we reveal an approach that harnesses hot carriers through diffusion over a very thin metal to achieve silicon-based mid-infrared ...
Zih-Chun Su, Yao-Han Dong, Ching-Fuh Lin
doaj   +1 more source

The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles. [PDF]

Nanomaterials (Basel), 2020
Liu X, Zhang Z, Lv B, Ding Z, Luo Z.
europepmc   +1 more source

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals [PDF]

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface.
Buckley, D. H., Mishina, H.
core   +1 more source

Monolayer MoS₂ field effect transistor with low Schottky barrier height with ferromagnetic metal contacts. [PDF]

Sci Rep, 2019
Gupta S, Rortais F, Ohshima R, Ando Y, Endo T, Miyata Y, Shiraishi M.   +6 more
europepmc   +1 more source

A low Schottky barrier height and transport mechanism in gold-graphene-silicon (001) heterojunctions. [PDF]

Nanoscale Adv, 2019
Courtin J, Le Gall S, Chrétien P, Moréac A, Delhaye G, Lépine B, Tricot S, Turban P, Schieffer P, Le Breton JC.   +9 more
europepmc   +1 more source

A new <i>in situ</i> method for modifying the Schottky barrier height at buried metal-organic semiconductor interfaces. [PDF]

Natl Sci Rev
Sirringhaus H.
europepmc   +1 more source

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing. [PDF]

Materials (Basel), 2018
Sun F, Li C, Fu C, Zhou X, Luo J, Zou W, Qiu ZJ, Wu D.   +7 more
europepmc   +1 more source