Results 131 to 140 of about 25,268 (194)

2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices. [PDF]

Adv Mater
Turker F, Xu B, Dong C, Labella M, Nayir N, Sheremetyeva N, Trdinich ZJ, Zhang D, Adabasi G, Pourbahari B, Lu LS, Auker WE, Wang K, Baykara M, Meunier V, Bassim N, van Duin ACT, Crespi VH, Robinson JA.   +18 more
europepmc   +1 more source

First-Principles Study on the Modulation of Schottky Barrier in Graphene/Janus MoSSe Heterojunctions by Interface Contact and Electric Field Effects. [PDF]

Nanomaterials (Basel)
Zhang Z, Li J, Xu X, Shi G.
europepmc   +1 more source

Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide. [PDF]

Nat Commun
Liu M, Niu J, Yang G, Zhao R, Chen K, Lu W, Liao F, Wu Z, Jiang C, Geng D, Lu N, Nathan A, Li L, Liu M.   +13 more
europepmc   +1 more source

Advances in Interfacial Engineering and Structural Optimization for Diamond Schottky Barrier Diodes. [PDF]

Materials (Basel)
Lu S, Zhang X, Wang S, Li M, Jiao S, Liang Y, Wang W, Zhang J.   +7 more
europepmc   +1 more source

Plasmon-Induced Graphene/Silicon Schottky Junctions for Ultrasensitive Gas Sensing. [PDF]

ACS Sens
Drozdowska K, Smulko J, Welearegay T, Österlund L, Rumyantsev S.   +4 more
europepmc   +1 more source

Two-dimensional TaS₂ as a contact material for MXene Sc₂CF₂ semiconductors: a first-principles study. [PDF]

RSC Adv
Vu TV, Huyen PTT, Hieu NN, Phuc HV, Nguyen CV.   +4 more
europepmc   +1 more source

Schottky barrier height enhancement on n-ln0.53Ga0.47

, 1992
Lüth, H., Meyer, F., Marso, M., Kordos, P.   +3 more
openaire   +1 more source

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Schottky-barrier devices with low barrier height

Proceedings of the IEEE, 1974
It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., In x Ga 1-x As,InAs y P 1-y , and In x Ga 1-x As y P 1-y ).
K. Kajiyama, S. Sakata, Y. Mizushima
openaire   +1 more source

CESIUM-GaAs SCHOTTKY BARRIER HEIGHT

Applied Physics Letters, 1967
The Schottky barrier height at the interface of cesium metal and vacuum-cleaved p-type GaAs has been found to be 0.63 ± 0.03 eV. These measurements were made photovoltaically at 80°K and indicate that a heavy coverage of cesium leaves the surface roughly intrinsic.
John J. Uebbing, Ronald L. Bell
openaire   +1 more source

Metal/n-GaP Schottky barrier heights

Solid-State Electronics, 1979
Abstract A systematic study, which aims to extend the existing metal/n-Gap Schottky barrier height data, is made. Schottky diodes of various barriers, which included Pt/n-GaP, Au/n-GaP, Ni/n-GaP, Mo/n-Gap, Al/n-GaP, Cr/n-GaP, Ag/n-GaP and Cu/n-GaP, were fabricated and their I-V and C-V characteristics were measured.
Tan F. Lei, Chung L. Lee, Chun Y. Chang
openaire   +1 more source