Results 141 to 150 of about 25,268 (194)

Schottky Barrier Height of Phosphidized InGaAs

Japanese Journal of Applied Physics, 1993
The Schottky barrier height of phosphidized InGaAs has been studied. The surface of InGaAs (In 53%) lattice-matched to InP is treated with gentle phosphine plasma. Schottky junctions are then formed on phosphidized InGaAs by evaporating various metals such as Au, Cu, Ti and Ag.
Takashi Sugino, Yoshifumi Sakamoto Yoshifumi Sakamoto, Junji Shirafuji Junji Shirafuji   +2 more
openaire   +1 more source

Quantitative explanation of the Schottky barrier height

Physical Review B, 2021
Eight decades ago, Schottky proposed that the energy barrier at the metal-semiconductor interface, which now bears his name, should be compared with the difference of two surface quantities, the work function (WF) of the metal and the ionization potential of the semiconductor.
Raymond T. Tung, Leeor Kronik
openaire   +1 more source

Fluctuations in Schottky barrier heights

Journal of Applied Physics, 1984
A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by ...
openaire   +1 more source

Barrier heights of GaN Schottky contacts

Applied Surface Science, 1997
Abstract Silver and lead contacts prepared by evaporation onto clean n-GaN(0001) surfaces are rectifying. Their zero-bias barrier heights and ideality factors were determined from the current-voltage characteristics. The observed linear correlation between the barrier heights and the ideality factors is attributed to nonuniform distributions of ...
Thorsten U. Kampen, Winfried Mönch
openaire   +1 more source

Optimum barrier height for Schottky-barrier detectors

Journal of Physics D: Applied Physics, 1982
Performance characteristics of Schottky-barrier detectors are investigated in terms of their physical parameters. It is shown that the detector cut-off frequency and responsivity-bandwidth product can be maximised while the level of minimum detectable power can be minimised by the proper choice of detector parameters.
openaire   +1 more source

Schottky-barrier height of iridium silicide

Applied Physics Letters, 1978
Iridium silicides have been prepared by annealing Ir films on (100) - and (111) -oriented Si from 300 to 500 °C. Phase identification was performed by both x-ray and electron diffractions, and Schottky-barrier height by current-voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the
I. Ohdomari, K. N. Tu, F. M. d’Heurle, T. S. Kuan, S. Petersson   +4 more
openaire   +1 more source

Schottky barrier height modulation using dopant segregation in schottky-barrier SOI-MOSFETs

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005., 2005
The effect of dopant segregation (DS) on the electrical behavior of silicon-on-insulator Schottky barrier MOSFETs (SB-MOSFETs) is investigated. Ion implantation with arsenic and boron and subsequent silicidation is used to create highly n- and p-doped interface layers at the silicide-silicon interface.
M. Zhang, J. Knoch, Q.T. Zhao, St. Lenk, U. Breuer, S. Mantl   +5 more
openaire   +1 more source

Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights

Journal of Applied Physics, 1987
A technique for fabricating controlled Schottky barrier heights to GaAs over the entire band gap is demonstrated. Thin, highly doped semiconductor layers at the metal-semiconductor interface allowed the reproducible control of the effective barrier height on n-type GaAs from near zero (i.e., ohmic behavior at 300 K) to 1.33 eV (the band gap equals 1.43
S. J. Eglash, N. Newman, S. Pan, D. Mo, K. Shenai, W. E. Spicer, F. A. Ponce, D. M. Collins   +7 more
openaire   +1 more source

Barrier Height of Titanium Silicide Schottky Barrier Diodes

Japanese Journal of Applied Physics, 1986
Schottky barrier diodes were fabricated on n-type Si surfaces with high resistivity. Barriers were produced by TiSi or TiSi2. Barrier height and resistivity of titanium silicide were examined in relation to phase differences identified by X-ray diffraction analysis. Barrier height was found to be unaffected by silicide phase.
openaire   +1 more source

Schottky barrier height in GaN/AlGaN heterostructures

Solid-State Electronics, 2006
We present a modified expression for PhiB that takes into account the effect of total polarization and the 2DEG concentration in GaN at the GaN/AlGaN heterointerface through the incorporation of Schottky barrier ...
A.F.M. Anwar, Elias W. Faraclas
openaire   +2 more sources