Results 151 to 160 of about 25,268 (194)
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Schottky Barrier Height in Fe/GaAs Films
IEEE Transactions on Magnetics, 2010We discuss the effect of annealing on the interfacial structure of Fe/GaAs films, with 2 × 4 surface reconstructions, and the subsequent effect on the Schottky barrier height. Images of the interfaces indicate that the annealing process can greatly reduce the level of atomic mixing. A study of the I-V characteristics of Fe/GaAs Schottky barrier diodes,
L. R. Fleet +7 more
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InP Schottky contacts with increased barrier height
Solid-State Electronics, 1982We present an analysis of Schottky barriers in n-InP made by incorporating a thin native oxide. An oxidation technique using nitric acid under illumination produces an oxide layer with uniform composition distribution within the layer. The growth rate is interpreted as being partially limited by diffusion presumably of oxygen through oxide.
O. Wada, A. Majerfield, P.N. Robson
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A reliable Schottky barrier height extraction procedure
2016 International Conference on Microelectronic Test Structures (ICMTS), 2016This work proposes a Schottky barrier extraction procedure which considers the thermionic field emission (TFE) model, image-force induced barrier lowering effect, and parasitic resistance. The accuracy of the Schottky barrier height extracted by the field emission (FE) model at forward bias and the TFE model at reverse bias is evaluated.
Bing-Yue Tsui, Tze-Yu Fu
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Aluminum-silicide reactions. II. Schottky-barrier height
Journal of Applied Physics, 1979The Schottky-barrier height of Al/silicide layers to n-type Si was measured as a function of annealing temperature with CoSi2, MoSi2, and PtxNi1−xSi for the silicide. The barrier heights before annealing were 0.64, 0.69, and 0.74 eV, respectively, in the systems mentioned.
G. J. van Gurp, W. M. Reukers
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Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors
Applied Surface Science, 2020Abstract Schottky barrier height of the diodes prepared on Au/Ni/4H-SiC for surface barrier detectors were studied by electrical methods of I-V and C-V measurements. Analysis of three parameters – barrier height, ideality factor and series resistance of the prepared structures showed that it was not possible to fit in the experimental curves ...
J. Osvald, L. Hrubčín, B. Zaťko
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Schottky barrier height tuning by Hybrid organic-inorganic multilayers
MRS Proceedings, 2014ABSTRACTSemiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal ...
V. Torrisi +5 more
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Fluctuations of the Au-Si(100) Schottky barrier height
Physical Review Letters, 1993Schottky barrier height fluctuations of Au films on Si(100) are directly imaged with nm-scale resolution by ballistic electron emission. Fluctuations are made visible by using a highly doped (N d ≃10 17 cm -3 ) substrate. Randomly distributed (approximately 10 -3 cm -2 ) spots (about 2 nm in diameter) of reduced barrier height (typical ΔΦ=20-50 meV ...
, Palm, , Arbes, , Schulz
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Barrier height modification in Schottky MIS diodes
Physics Letters A, 1982Abstract Expressions for the potential barrier height of Schottky MIS diodes having gaussian doping profiles are derived and solved numerically both at thermal equilibrium and in the presence of applied voltages. The possibility of barrier height modification using a thin highly doped surface layer is discussed.
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Optimal barrier height for Schottky diode rectifiers
International Journal of Electronics, 1984An elementary analysis reveals that an optimal barrier height exits for a Schottky barrier diode used as a rectifier. Techniques available to modify the Schottky barrier can be readily applied to achieve the desired barrier height.
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Inhomogeneous Barrier Height Analysis of (Ni/Au)–InAlGaN/GaN Schottky Barrier Diode
Japanese Journal of Applied Physics, 2011The current–voltage (I–V) characteristics of (Ni/Au)–InAlGaN/GaN Schottky barrier diode (SBDs) have been measured in the temperature range of 297 to 473 K. Results have been interpreted based on the assumption of Gaussian distribution (GD) of barrier heights (BH) due to BH inhomogeneities at the interface.
Sopanen, Markku +5 more
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