Results 161 to 170 of about 25,268 (194)

Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode

Applied Physics Letters, 2013
The dependence of barrier height inhomogeneity on the gate metal has been investigated for the AlGaN/GaN Schottky diode. The analysis from the electroreflectance spectroscopy measurement for different types of Schottky gate metals tried (in this case, Au, Pt, Pd, and Ni) reveals that the surface donor states of AlGaN/GaN heterostructure strongly ...
Jong-Hoon Shin, Jinhong Park, SeungYup Jang, T. Jang, Kyu Sang Kim   +4 more
openaire   +1 more source

Schottky barrier heights of n/p-type erbium-silicided schottky diodes

Microelectronic Engineering, 2008
The Schottky barrier heights for electrons and holes of erbium-silicided Schottky diodes were extracted from the current-voltage-temperature characteristics in reverse bias condition. The effective barrier heights increased with temperature. The highest effective barrier heights for electrons and holes were extracted to be 0.38eV and 0.67eV at the high
Myungsim Jun, Yarkyeon Kim, Cheljong Choi, Taeyoub Kim, Soonyoung Oh, Moongyu Jang   +5 more
openaire   +1 more source

Gaussian distribution of inhomogeneous barrier height in Si Schottky barriers

Surface Science, 2001
Abstract Deviations from the ideal characteristics in actual nearly ideal Schottky barriers (SBs) are due to inhomogeneous distributions of the Schottky barrier height (SBH) φ . By assuming the distribution as a Gaussian of the standard deviation σ from the ideal SBH Φ B , the SB characteristics have been qualitatively explained.
openaire   +1 more source

Ge-based Schottky Barrier Height Modulation Technology

2016
Germanium (Ge) has gained a lot of attention for its potential application as an alternative channel material due to its high and symmetric carrier mobilities. However, due to the low solid solubility and high diffusivity of n-type dopants in Ge, it is very challenging to obtain heavily doped shallow junction.
openaire   +1 more source

Molecule‐Upgraded van der Waals Contacts for Schottky‐Barrier‐Free Electronics

Advanced Materials, 2021
Xiankun Zhang, Zhuo Kang, Baishan Liu
exaly  

Schottky barrier tuning via surface plasmon and vacancies for enhanced photocatalytic H2 evolution in seawater

Applied Catalysis B: Environmental, 2022
Caijin Huang
exaly  

Reviving the “Schottky” Barrier for Flexible Polymer Dielectrics with a Superior 2D Nanoassembly Coating

Advanced Materials, 2021
Jingjing Liu, Chao Wu, Thomas J Moran
exaly  

High-energy ball-milling constructing P-doped g-C3N4/MoP heterojunction with Mo N bond bridged interface and Schottky barrier for enhanced photocatalytic H2 evolution

Applied Catalysis B: Environmental, 2022
Alan Meng, Zhenjiang Li
exaly  

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Advanced Functional Materials, 2021
Krishna Murali, Medha Dandu, Kenji Watanabe   +2 more
exaly  

Lowering the schottky barrier of g-C3N4/Carbon graphite heterostructure by N-doping for increased photocatalytic hydrogen generation

Applied Catalysis B: Environmental, 2020
Haiwei Du, Yu-Peng Yuan
exaly