Results 11 to 20 of about 25,268 (194)

Spin polarization control through resonant states in an Fe/GaAs Schottky barrier [PDF]

, 2008
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers. It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons ...
A. Hirohata, A. Hirohata, C. H. W. Barnes, D. A. Papaconstantopoulos, H. Itoh, H. Kurebayashi, J. A. C. Bland, J. Inoue, S. Honda, T. Trypiniotis   +9 more
core   +2 more sources

Au/InSe Schottky barrier height determination [PDF]

Revue de Physique Appliquée, 1990
Au/InSe interface formation was studied and a microscopic Schottky barrier of 0.7 eV was measured in accordance with the value obtained by I( V) and photovoltage measurements. This barrier is formed for submonolayer coverage before any chemical reaction or interdiffusion is evidenced.
Mamy, R., Zaoui, X., Barrau, J., Chevy, A.   +3 more
openaire   +2 more sources

Effect of Schottky barrier height on quantitative analysis of deep-levels in n-type GaN by deep-level transient spectroscopy

AIP Advances, 2021
Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of ...
Keito Aoshima, Masahiro Horita, Jun Suda
doaj   +1 more source

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN [PDF]

, 2004
We report measurements of the Schottky barrier heights of Ni/Au contacts on Ga-polarity and N-polarity n-GaN under hydrostatic pressure and applied in-plane uniaxial stress.
Dogan, S., Kauser, M. Z., Lee, K. Y., Liu, Y., Morkoç, Hadis, Nathan, M. I., Park, S. S., Ruden, P. P.   +7 more
core   +2 more sources

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

Nanoscale Research Letters, 2020
In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K.
Tao Zhang, Yixian Shen, Qian Feng, Xusheng Tian, Yuncong Cai, Zhuangzhuang Hu, Guangshuo Yan, Zhaoqing Feng, Yachao Zhang, Jing Ning, Yongkuan Xu, Xiaozheng Lian, Xiaojuan Sun, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao   +16 more
doaj   +1 more source

Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate

Photonics, 2021
GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively.
Fangzhou Liang, Wen Chen, Meixin Feng, Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Qibao Wu, Hui Yang   +9 more
doaj   +1 more source

Electrical characteristics of Al contact to NiSi using thin W layer as a barrier [PDF]

, 1981
We show that the thermal instability that is observed in Schottky diodes with an Al film on NiSi contact to can be removed by introducing a very thin (~250 Å) tungsten film between the Al and the NiSi layers.
Bartur, M., Nicolet, M-A.
core   +1 more source

A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor

IEEE Journal of the Electron Devices Society, 2020
In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET).
Xi Liu, Kailu Ma, Yicheng Wang, Meile Wu, Jong-Ho Lee, Xiaoshi Jin   +5 more
doaj   +1 more source

Investigation of significantly high barrier height in Cu/GaN Schottky diode

AIP Advances, 2016
Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg, Ashutosh Kumar, S. Nagarajan, M. Sopanen, R. Singh   +4 more
doaj   +1 more source

EFFECT OF RAPID THERMAL TREATMENT ТЕMPERATURE ON ELECTROPHYSICAL PROPERTIES OF NICKEL FILMS ON SILICON

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020
Present work is devoted to determination the regularity of change of specific resistance and Schottky barrier height of nickel films on n-type silicon (111) at their rapid thermal treatment in the temperatures range from 200 to 550 °C.
Ja. A. Solovjov, V. A. Pilipenko
doaj   +1 more source