Results 21 to 30 of about 25,268 (194)

Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts

IEEE Journal of the Electron Devices Society, 2017
Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state ...
Max Stelzer, Moritz Jung, Franz Kreupl
doaj   +1 more source

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Nanomaterials, 2018
We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their
Moonsang Lee, Thi Kim Oanh Vu, Kyoung Su Lee, Eun Kyu Kim, Sungsoo Park   +4 more
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Schottky barriers at hexagonal boron nitride/metal interfaces: a first principles study [PDF]

, 2014
The formation of a Schottky barrier at the interface between a metal and hexagonal boron nitride (h-BN) is studied using density functional theory. For metals whose work functions range from 4.2 to 6.0 eV, we find Schottky barrier heights for holes ...
Bokdam, Menno, Brocks, Geert, Katsnelson, Mikhail I., Kelly, Paul J.   +3 more
core   +4 more sources

Effects of alloy disorder on Schottky-barrier heights [PDF]

Physical Review B, 1987
The effects of alloy disorder on the Schottky barriers at semiconductor-alloy\char21{}metal interfaces are investigated within the defect model of Schottky-barrier formation. The deep levels and the associated wave functions for surface antisite defects, which are believed to be responsible for the barriers considered here, were previously calculated ...
MYLES, CW, REN, SF, Allen, Roland E., REN, SY.   +3 more
openaire   +3 more sources

Temperature-dependent electrical characterizations of high-current-density AlN quasi-vertical Schottky barrier diodes on AlN substrates [PDF]

APL Electronic Devices
High-current-density (>1 kA/cm2) quasi-vertical AlN Schottky barrier diodes (SBDs) were fabricated on native AlN substrates by metal–organic chemical vapor deposition.
Bingcheng Da, Fikadu Alema, Junzhe Xie, Will Brand, Vitali Soukhoveev, Dawei Wang, Xianzhi Wei, Dinusha Herath Mudiyanselage, Andrei Osinsky, Houqiang Fu   +9 more
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The Research of Influence of the Barrier Transition Parameters Determination Methods on their Accuracy [PDF]

Журнал нано- та електронної фізики, 2017
The accuracy of the main qualitative barrier transitions characteristics (barrier height пЃЄb and nonideality factor О·) depends on the accuracy of the measurement as the current and voltage as their determination method.
V.S.В Dmitriev
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The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment [PDF]

, 2020
Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated
Baker, G. W. C., Bonyadi, Yeganeh, Dai, Tianxiang, Dudley, M., Gammon, P. M., Han, Yan, Hindmarsh, Steven A., Li, Fan, Liu, Y., Mawby, P. A. (Philip A.), Raghothamachar, B., Renz, A. B., Shah, V. A., Sharma, Y., Vavasour, Oliver J., Walker, Marc   +15 more
core   +1 more source

Spin-polarized electron transport processes at the ferromagnet/semiconductor interface [PDF]

, 2000
Circularly polarized light was used to excite electrons with a spin polarization perpendicular to the film plane in ferromagnet/semiconductor hybrid structures.
Bland, J.A.C., Guertler, C.M., Hirohata, A., Holmes, S.N., Xu, Y.B.   +4 more
core   +1 more source

Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions

IEEE Journal of the Electron Devices Society
Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee, Yoon-Jeong Kim, Seokhoon Ahn, Dae-Young Jeon   +3 more
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Interface formation and Schottky barrier height for Y, Nb, Au, and Pt on Ge as determined by hard x-ray photoelectron spectroscopy

AIP Advances, 2023
Development of a robust, thin, hole-blocking (n+) contact on high purity germanium (HPGe) has been the main challenge in the development of Ge-based radiation sensors.
Abdul K. Rumaiz, Conan Weiland, Ian Harding, Neha S. Nooman, Thomas Krings, Ethan L. Hull, Gabriele Giacomini, Wei Chen, Eric Cockayne, D. Peter Siddons, Joseph C. Woicik   +10 more
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