Results 31 to 40 of about 25,268 (194)

Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors [PDF]

, 2001
In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process.
Aleksey E. Bolotnikov, Bolotnikov, C.M. Hubert Chen, Cisneros, Cova, Crowell, Dharmadasa, Fiona A. Harrison, Harrison, Hudait, Rakhshani, Stephen M. Schindler, Steven E. Boggs, Sze, Szeles, Turut, Venghaus, Wada, Walter R. Cook, Wright, Yoon, Yousaf   +21 more
core   +2 more sources

Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure

Materials Research Express, 2021
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi, Kaiyuan Lai, Haojie Lv, Bao Qi, Yuheng Zhao   +4 more
doaj   +1 more source

Schottky barrier formation and band bending revealed by first principles calculations

, 2015
An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped rutile titania ...
Fang, Yurui, Gao, Shiwu, Hellman, Anders, Jiao, Yang, Käll, Mikael   +4 more
core   +1 more source

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Heliyon, 2020
The effects of an epitaxial layer on the rectifying behavior of n-GaAs/Ti/Au/Si:Al0.33Ga0.67 As diodes have been examined through the inhomogeneity model on n+-GaAs substrate with orientation.
Noorah Ahmed Al-Ahmadi
doaj   +1 more source

Improved Hydrogen-Sensing of TiO₂ Schottky Device Through Schottky Barrier Height Modulation

Sensors
Adjusting the Schottky barrier height is an important approach to enhancing the gas-sensing performance of TiO2 Schottky sensors. In this study, micro TiO2 nanotube Schottky sensors were fabricated via magnetron sputtering and anodic oxidation, with ...
Xiaochuan Long, Xiao Zhang, Zheng Lu, Feng Wei, Xiaopeng Liu   +4 more
doaj   +1 more source

Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]

Журнал нано- та електронної фізики, 2011
We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy, B. Prasanna Lakshmi, A. Ashok Kumar, V. Rajagopal Reddy   +3 more
doaj  

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

, 2019
An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport.
Dong, Dan, Li, Baikui, Li, Hui, Lin, Yan, Lu, Chengjin, Qin, Zuoyan, Qiu, Ran, Tang, Xi, Wang, Jiannong, Wu, Honglei, Zheng, Ruisheng, Zhou, Qin   +11 more
core   +1 more source

Electron diffusion length and lifetime in p-type GaN [PDF]

, 1998
We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical vapor deposition.
Bandić, Z. Z., Bridger, P. M., McGill, T. C., Piquette, E. C.   +3 more
core   +1 more source

Optimum Barrier Height for SiC Schottky Barrier Diode

ISRN Electronics, 2013
The study of barrier height control and optimization for Schottky barrier diode (SBD) from its physical parameters have been introduced using particle swarm optimization (PSO) algorithm. SBD is the rectifying barrier for electrical conduction across the metal semiconductor (MS) junction and, therefore, is of vital importance to the successful operation
Alaa El-Din Sayed Hafez, Mohamed Abd El-Latif   +1 more
openaire   +1 more source

Scaling of nano-Schottky-diodes

, 2002
A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional ...
Klapwijk, T. M., Rogge, S., Smit, G. D. J.   +2 more
core   +2 more sources