Results 41 to 50 of about 25,268 (194)
Reverse Schottky-Asymmetry Spin Current Detectors
, 2010 By reversing the Schottky barrier-height asymmetry in hot-electron semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved: 1.
Appelbaum, Ian, Lu, Yuan
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Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
Results in Physics, 2016 The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300–420 K.
N.A. Al-Ahmadi, H.A. Al-Jawhari
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Non-Linear I-V Characteristics of Double Schottky Barriers and Polycrystalline Semiconductors
, 1992 An attempt to determine theoretically the highly non-linear current-voltage (I-V) characteristics of polycrystalline semiconductors, such as ZnO-based varistors, is made from the electrical properties of individual grain boundaries under dc bias.
Bernasconi +30 more
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Tuneable Schottky contact of MoSi2N4/TaS2 van der Waals heterostructure
Heliyon, 2023 The two-dimensional MoSi2N4 monolayer is an emerging semiconductor material that offers considerable promise due to its ultra-thin profile, tuneable mechanical properties, excellent optoelectronic properties and exceptional environmental stability.
Jinglin Xia +7 more
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Nanophotonics, 2021 MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface.
Yang Changming +6 more
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Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad
AIP Advances, 2019 The transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode.
Yoshihiro Shimazu +2 more
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Journal of Materials Research and Technology, 2022 A 3-terminal device with a tunable Schottky barrier controls the charge transport across a vertically stacked structure named “barristor”- one composed of a graphene/rhenium diselenide (ReSe2) p-n heterojunction to exploit the advantages of the high ...
Thi Phuong-Anh Bach +7 more
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Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
, 2011 The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/
Hamaya, K. +4 more
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An atomistic view on the Schottky barrier lowering applied to SrTiO3/Pt contacts
AIP Advances, 2019 The interface between a metal and a semiconductor is known as Schottky contact and a key factor in semiconductor technologies. Those interfaces normally build an energetic barrier, which is responsible for the exponential current voltage dependence ...
C. Funck, S. Menzel
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Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation
Applied Sciences, 2019 Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces,
Jules Courtin +7 more
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