Results 51 to 60 of about 25,268 (194)

Strong magnetic field effect on above-barrier transport in Pb-p-HgCdTe Schottky barriers [PDF]

, 2012
Due to large difference in effective masses of light and heavy holes it is usually supposed that the above-barrier current in Schottky barriers on p-type semiconductor is controlled only by the heavy holes.
Radantsev, V. F., Zavyalov, V. V.
core   +3 more sources

Band gap and Schottky barrier heights of multiferroic BiFeO3 [PDF]

Applied Physics Letters, 2007
Bi Fe O 3 is an interesting multiferroic oxide and a potentially important Pb-free ferroelectric. However, its applications can be limited by large leakage currents. Its band gap is calculated by the density-functional based screened exchange method to be 2.8eV, similar to experiment.
Clark, S.J., Robertson, J.
openaire   +2 more sources

Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Nanoscale Research Letters, 2019
We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu, Qian Feng, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Schottky-based band lineups for refractory semiconductors [PDF]

, 1995
An overview is presented of band alignments for small-lattice parameter, refractory semiconductors. The band alignments are estimated empirically through the use of available Schottky barrier height data, and are compared to theoretically predicted ...
Archer, Baur, Benjamin, Chrenko,, Dombrowski, Fomichev, Fujii, Glover,, Hacke, Hagen,, Harrison, Hicks, Himpsel, Ioannou, J. F. Swenberg, J. O. McCaldin, Kumashiro, Kurbatov, Lepek, Lightowlers, M. W. Wang, Martin, Martin, McCaldin, McCaldin,, Mead, Mead, Miyata, Nakamura,, Neville, Phillips, R. J. Hauenstein, Strite, T. C. McGill, Waldrop, Waldrop, Waldrop, Wang, Wang, Wu, Yoshida   +40 more
core   +4 more sources

Temperature dependent transport characteristics of graphene/n-Si diodes [PDF]

, 2014
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes.
B. J. van Wees, M. Wojtaszek, P. J. Zomer, R. Ruiter, Rhoderick E. H., S. Parui, Sze S. M., T. Banerjee   +7 more
core   +2 more sources

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

International Journal of Energetica, 2020
In this work, we have presented a theoretical study of  Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj  

Barrier inhomogeneities of Al/p-In2Te3 thin film Schottky diodes [PDF]

, 2011
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-In2Te3/Al thin films Schottky diodes papered by Flash Evaporation technique were measured in the temperature range 303-335 K have been interpreted on the basis of the assumption
Desai, M.S., Desai, R.R., Lakshminarayana, D., Padha, N., Panchal, C.J., Patel, P.B., Sachdeva, Ramesh   +6 more
core  

Simulation Study of Ge p-type Nanowire Schottky Barrier MOSFETs

, 2013
Ambipolar currents in Germanium p-type nanowire Schottky barrier MOSFETs were calculated fully quantum-mechanically by using the multi-band k.p method and the non-equilibrium Green's function approach. We investigated the performance of devices with 100,
Lee, Jaehyun, Shin, Mincheol
core   +1 more source

Limiting efficiencies of solar energy conversion and photo-detection via internal emission of hot electrons and hot holes in gold [PDF]

, 2015
We evaluate the limiting efficiency of full and partial solar spectrum harvesting via the process of internal photoemission in Au-semiconductor Schottky junctions.
Boriskina, Svetlana V., Chen, Gang, Hsu, Wei-Chun, Liao, Bolin, Zhou, Jiawei   +4 more
core   +2 more sources

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

, 2012
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (
C. Ojeda-Aristizabal, Campbell I. A., I. Appelbaum, J. Paglione, M. S. Fuhrer, N. P. Butch, Sze S. M.   +6 more
core   +1 more source